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Power Transistors. D560 Datasheet

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Power Transistors. D560 Datasheet






D560 Transistors. Datasheet pdf. Equivalent




D560 Transistors. Datasheet pdf. Equivalent





Part

D560

Description

Silicon NPN Power Transistors



Feature


SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD 560 DESCRIPTION ·With TO-220C package ·Complement to type 2SB601 ·DARLINGT ON APPLICATIONS ·Low frequency power amplifier ·Low speed switching industr ial use PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting b ase Emitter Absolute maximum ratings(T a=25 ) SYMBOL PARAMET.
Manufacture

SavantIC

Datasheet
Download D560 Datasheet


SavantIC D560

D560; ER VCBO Collector-base voltage VCEO V EBO IC ICM IB Collector-emitter voltag e Emitter-base voltage Collector curren t (DC) Collector current-Peak Base curr ent PC Collector dissipation Tj Junct ion temperature Tstg Storage temperatur e CONDITIONS Open emitter Open base Op en collector TC=25 VALUE 150 100 7 5 8 0.5 30 1.5 150 -50~150 UNIT V V V A A A W SavantIC Sem.


SavantIC D560

iconductor Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwis e specified SYMBOL PARAMETER CONDITI ONS V(BR)CEO Collector-emitter breakdo wn voltage IC=30mA; IB=0 VCEsat Collec tor-emitter saturation voltage IC=3A; I B=3mA VBEsat Base- .


SavantIC D560

.

Part

D560

Description

Silicon NPN Power Transistors



Feature


SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD 560 DESCRIPTION ·With TO-220C package ·Complement to type 2SB601 ·DARLINGT ON APPLICATIONS ·Low frequency power amplifier ·Low speed switching industr ial use PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting b ase Emitter Absolute maximum ratings(T a=25 ) SYMBOL PARAMET.
Manufacture

SavantIC

Datasheet
Download D560 Datasheet




 D560
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD560
DESCRIPTION
·With TO-220C package
·Complement to type 2SB601
·DARLINGTON
APPLICATIONS
·Low frequency power amplifier
·Low speed switching industrial use
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
IC
ICM
IB
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
150
100
7
5
8
0.5
30
1.5
150
-50~150
UNIT
V
V
V
A
A
A
W




 D560
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=3mA
VBEsat
Base-emitter saturation voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
IC=3A; IB=3mA
VCB=100V; IE=0
VEB=5V; IC=0
IC=3A ; VCE=2V
hFE-2
DC current gain
IC=5A ; VCE=2V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=3A;IB1=-IB2=3mA
VCC=50V;RL=16.7?
hFE-1 Classifications
RO
Y
2000-5000 3000-7000 5000-15000
Product Specification
2SD560
MIN TYP. MAX UNIT
100 V
1.5 V
2.0 V
1 µA
3 mA
2000 6000 15000
500
1.0 µs
3.5 µs
1.2 µs
2




 D560
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SD560
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3



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