A2SHB Datasheet (data sheet) PDF





A2SHB Datasheet, N-Channel Enhancement Mode Field Effect Transistor

A2SHB   A2SHB  

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Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Fie ld Effect Transistor General Descripti on The LPM2302 is N-channel logic enhan cement mode power field effect transist or, which are produced by using high ce ll density, DMOS trench technology. Thi s high density process is especially ta ilored to minimize on-state resistance. These devices are particularly suitabl e for low voltage applications, noteboo k computer power management and other b attery powered circuits where high-side switching are needed. Ordering Informa tion LPM2302- □ □ □ F: Pb-Free Pa ckage Type B3: SOT23-3 Features ■ 20 V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.

A2SHB Datasheet, N-Channel Enhancement Mode Field Effect Transistor

A2SHB   A2SHB  
5V ■ 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS =2.5V ■ Super high density cell desig n for extremely low RDS(ON) ■ SOT23 P ackage Applications  Portable Media Players  Cellular and Smart mobile phone  LCD  DSC Sensor  Wirele ss Card  Marking Information Device Marking LPM2302B3F A2sHB Package SO T23-3 Shipping 3K/REEL Pin








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