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LPM2302 20V/3.5A N-Channel Enhancement Mode Fie ld Effect Transistor
General Descripti on
The LPM2302 is N-channel logic enhan cement mode power field effect transist or, which are produced by using high ce ll density, DMOS trench technology. Thi s high density process is especially ta ilored to minimize on-state resistance. These devices are particularly suitabl e for low voltage applications, noteboo k computer power management and other b attery powered circuits where high-side switching are needed.
Ordering Informa tion
LPM2302- □ □ □
Pa ckage Type B3: SOT23-3
■ 20 V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.