Effect Transistor. A2SHB Datasheet

A2SHB Transistor. Datasheet pdf. Equivalent

Part A2SHB
Description N-Channel Enhancement Mode Field Effect Transistor
Feature Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor .
Manufacture Low Power Semi
Datasheet
Download A2SHB Datasheet

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A2SHB
Preliminary Datasheet
LPM2302
LPM2302 20V/3.5A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The LPM2302 is N-channel logic enhancement mode
power field effect transistor, which are produced by
using high cell density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suitable for low voltage
applications, notebook computer power management
and other battery powered circuits where high-side
switching are needed.
Ordering Information
LPM2302- □ □ □
F: Pb-Free
Package Type
B3: SOT23-3
Features
20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V
20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V
Super high density cell design for extremely low
RDS(ON)
SOT23 Package
Applications
Portable Media Players
Cellular and Smart mobile phone
LCD
DSC Sensor
Wireless Card
Marking Information
Device
Marking
LPM2302B3F A2sHB
Package
SOT23-3
Shipping
3K/REEL
Pin Configurations
(SOT-23)
TOP VIEW
D
G
DG
S
S
LPM2302 00 Jun.-2018
Email: marketing@lowpowersemi.com
www.lowpowersemi.com
Page 1 of 5



A2SHB
Functional Pin Description
Name
G
S
D
Absolute Maximum Ratings
Preliminary Datasheet
Description
Gate Electrode
Source
Drain Electrode
LPM2302
Absolute Maximum Ratings TA=25Unless Otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
Pulsed Drain Current E
Power Dissipation
TA=25
TA=70
TA=25
TA=70
VDS 20
VGS ±12
ID 3.5
2.4
IDM 8
1.25
PO
0.8
V
V
A
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ. Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
t 10S
Steady-state
Steady-state
RθJA
RθJL
130 /W
160 /W
80 /W
LPM2302 00 Jun.-2018
Email: marketing@lowpowersemi.com
www.lowpowersemi.com
Page 2 of 5





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