GMS2302AL

SOT-23 (SOT-23 Field Effect Transistors) GMS2302AL N-Channel Enhancement-Mode MOS FETs N MOS ■MAXIMUM RATINGS Characteristic Symbol Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Current (pulsed) - Total Device Dissipation TA=25℃ 25℃ Junction BVDSS VGS ID IDM PD TJ Storage Temperature Tstg ■DEVICE MARKING GMS2302AL=A2SHB Max 20 +8 2.6 10 900 150 -55to+150 Unit V V A A mW ℃ ℃ 1 GMS2302AL ■ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted ， 25℃) Characteristic Symbol Min Typ Max Drain-Source Breakdown Voltage -(ID = 250uA,VGS=0V) Gate Threshold Voltage (ID...