| Feature |
SOT-23 (SOT-23 Field Effect Transistors)
GMS2302AL
N-Channel Enhancement-Mode MOS FETs
N MOS
■MAXIMUM RATINGS
Characteristic
Symbol
Drain-Source Voltage -
Gate- Source Voltage -
Drain Current (continuous) -
Drain Current (pulsed) -
Total Device Dissipation
TA=25℃ 25℃
Junction
BVDSS VGS ID IDM PD TJ
Storage Temperature
Tstg
■DEVICE MARKING GMS2302AL=A2SHB
Max 20 +8 2.6 10 900 150
-55to+150
Unit V V A A mW ℃ ℃
1
GMS2302AL
■ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted ， 25℃)
Characteristic
Symbol Min
Typ
Max
Drain-Source Breakdown Voltage -(ID = 25. |
