|
|
Effect Transistors. A2SHB Datasheet |
|
|
SOT-23 場效應晶體管(SOT-23 Field Effect Transistors)
GMS2302AL
N-Channel Enhancement-Mode MOS FETs
N 沟道增强型 MOS 场效应管
■MAXIMUM RATINGS 最大額定值
Characteristic 特性參數
Symbol 符號
Drain-Source Voltage
漏極-源極電壓
Gate- Source Voltage
栅極-源極電壓
Drain Current (continuous)
漏極電流-連續
Drain Current (pulsed)
漏極電流-脉冲
Total Device Dissipation
總耗散功率
TA=25℃環境溫度爲 25℃
Junction 結溫
BVDSS
VGS
ID
IDM
PD
TJ
Storage Temperature 儲存溫度
Tstg
■DEVICE MARKING 打標
GMS2302AL=A2SHB
Max 最大值
20
+8
2.6
10
900
150
-55to+150
Unit 單位
V
V
A
A
mW
℃
℃
1
|
|
GMS2302AL
■ELECTRICAL CHARACTERISTICS 電特性
(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)
Characteristic
特性參數
Symbol Min
符號 最小值
Typ
典型值
Max
最大值
Drain-Source Breakdown Voltage
漏極-源極擊穿電壓(ID = 250uA,VGS=0V)
Gate Threshold Voltage
栅極開启電壓(ID = 250uA,VGS= VDS)
Drain-Source On Voltage
漏極-源極導通電壓(ID= 50mA,VGS= 5V)
(ID = 500mA,VGS= 10V)
BVDSS
VGS(th)
VDS(ON)
20
0.4
—
——
— 1.5
— 0.375
3.75
Diode Forward Voltage Drop
内附二極管正向壓降(IS= 0.75A,VGS=0V)
Zero Gate Voltage Drain Current
零栅壓漏極電流(VGS=0V, VDS= 16V)
(VGS=0V, VDS= 16V, TA=55℃)
Gate Body Leakage
栅極漏電流(VGS=+8V, VDS=0V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(ID=2.6A,VGS=4.5V)
(ID=2A,VGS=2.5V)
Input Capacitance 輸入電容
(VGS=0V, VDS= 6V,f=1MHz)
VSD
IDSS
IGSS
RDS(ON)
CISS
—
—
—
—
—
— 1.2
—1
10
— +100
— 85
120
— 880
Common Source Output Capacitance
共源輸出電容(VGS=0V, VDS= 6V,f=1MHz)
COSS
—
— 270
Turn-ON Time 开启時間
(VDS= 6V, ID= 1A, RGEN=6Ω)
t(on) — — 20
Turn-OFF Time 关断時間
(VDS= 6V, ID= 1A, RGEN=6Ω)
t(off) — — 65
Unit
單位
V
V
V
V
uA
nA
mΩ
pF
pF
ns
ns
Pulse Width<300μs; Duty Cycle<2.0%
2
|
■DIMENSION 外形封裝尺寸
單位(UNIT)：mm
GMS2302AL
3
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |