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Double diode. BAW56N3 Datasheet

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Double diode. BAW56N3 Datasheet






BAW56N3 diode. Datasheet pdf. Equivalent




BAW56N3 diode. Datasheet pdf. Equivalent





Part

BAW56N3

Description

Double diode



Feature


CYStech Electronics Corp. High –speed double diode BAW56N3 Spec. No. : C303N 3A Issued Date : 2003.04.12 Revised Dat e 2010.10.21 Page No. : 1/6 Descriptio n The BAW56N3 consists of two high-spee d switching diodes with common anodes, fabricated in planar technology, and en capsulated in a small SOT-23 plastic SM D package. Equivalent Circuit BAW56N3 21 3 1:Cathode 2:Cat.
Manufacture

CYStech

Datasheet
Download BAW56N3 Datasheet


CYStech BAW56N3

BAW56N3; hode 3:Common Anode Outline SOT-23 Co mmon Anode Cathode Cathode Features Small plastic SMD package • High sw itching speed: max. 4ns • Continuous reverse voltage: max. 100V • Repetiti ve peak reverse voltage: max. 110V • Repetitive peak forward current: max. 4 50mA. • Pb-free package Applications • High-speed switching in thick and t hin-film circuits. BAW56N3 CYSte.


CYStech BAW56N3

k Product Specification CYStech Electro nics Corp. Absolute Maximum Ratings @TA =25℃ Spec. No. : C303N3A Issued Date : 2003.04.12 Revised Date 2010.10.21 P age No. : 2/6 Parameters Repetitive pe ak reverse voltage Continuous reverse v olt .


CYStech BAW56N3

.

Part

BAW56N3

Description

Double diode



Feature


CYStech Electronics Corp. High –speed double diode BAW56N3 Spec. No. : C303N 3A Issued Date : 2003.04.12 Revised Dat e 2010.10.21 Page No. : 1/6 Descriptio n The BAW56N3 consists of two high-spee d switching diodes with common anodes, fabricated in planar technology, and en capsulated in a small SOT-23 plastic SM D package. Equivalent Circuit BAW56N3 21 3 1:Cathode 2:Cat.
Manufacture

CYStech

Datasheet
Download BAW56N3 Datasheet




 BAW56N3
CYStech Electronics Corp.
High –speed double diode
BAW56N3
Spec. No. : C303N3A
Issued Date : 2003.04.12
Revised Date 2010.10.21
Page No. : 1/6
Description
The BAW56N3 consists of two high-speed switching diodes with common anodes, fabricated in planar
technology, and encapsulated in a small SOT-23 plastic SMD package.
Equivalent Circuit
BAW56N3
21
3
1Cathode
2Cathode
3Common Anode
Outline
SOT-23
Common Anode
Cathode
Cathode
Features
Small plastic SMD package
High switching speed: max. 4ns
Continuous reverse voltage: max. 100V
Repetitive peak reverse voltage: max. 110V
Repetitive peak forward current: max. 450mA.
Pb-free package
Applications
High-speed switching in thick and thin-film circuits.
BAW56N3
CYStek Product Specification




 BAW56N3
CYStech Electronics Corp.
Absolute Maximum Ratings @TA=25
Spec. No. : C303N3A
Issued Date : 2003.04.12
Revised Date 2010.10.21
Page No. : 2/6
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current(single diode loaded)
Continuous forward current(double diode loaded)
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125prior to surge t=1μs
t=1ms
t=1s
Total power dissipation(Note 1)
Junction Temperature
Storage Temperature
Note 1: Device mounted on an FR-4 PCB.
Symbol Min Max Unit
VRRM - 110 V
VR - 100 V
IF
-
-
215
125
mA
IFRM
450 mA
IFSM
-
-
4A
1A
- 0.5 A
Ptot 250 mW
Tj - 150 °C
Tstg -65 +150 °C
Electrical Characteristics @ Tj=25unless otherwise specified
Parameters
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Forward recovery voltage
Symbol
Conditions
Min Typ. Max Unit
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
VR=25V
IR
VR=100V
VR=25V,Tj=150
VR=100V,Tj=150
715 mV
-
-
855 mV
1V
1.25 V
30 nA
-
-
1 μA
30 μA
50 μA
Cd VR=0V, f=1MHz
- - 2 pF
when switched from IF=10mA to
trr IR=10mA,RL=100, measured - - 4 ns
at IR=1mA
Vfr
when switched from IF=10mA
tr=20ns
-
- 1.75 V
Thermal Characteristics
Symbol
Rth,j-tp
Rth, j-a
Parameter
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Note 1: Device mounted on an FR-4 PCB.
BAW56N3
Conditions
Note 1
Value
360
500
Unit
/W
/W
CYStek Product Specification




 BAW56N3
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C303N3A
Issued Date : 2003.04.12
Revised Date 2010.10.21
Page No. : 3/6
Forward Current vs Ambient Temperature
250
225
200
175
150
125
100
75
50
25
0
0
single diode loaded
double diode loaded
50 100 150 200
Ambient Temperature---Ta(℃)
Non-repetitive peak forward
current vs pulse duration
100
10
1
0.1
1
10 100 1000
Pulse Duration---tp(μs)
10000
Forward Current vs Forward Voltage
275
250
225
200
175
150
125
100
75
50
25
0
0
0.2 0.4 0.6 0.8 1 1.2 1.4
Forward Voltage---VF(V)
Diode Capacitance vs Reverse Voltage
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2 4 6 8 10 12 14 16
Reverse Voltage---VR(V)
Ordering Information
Device
BAW56N3
Package
SOT-23
(Pb-free package)
Shipping
3000 pcs / Tape & Reel
Marking
A1
BAW56N3
CYStek Product Specification



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