BSS84S6R

CYStech Electronics Corp. Spec. No. : C465S6R Issued Date : 2012.12.25 Revised Date : Page No. : 1/ 8 Dual P-Channel MOSFET BSS84S6R Features Low on-resistance High ESD capability High speed switching Low-voltage drive(-2.5V) Pb-free package BVDSS ID RDSON@VGS=-10V, ID=-100mA RDSON@VGS=-5V, ID=-100mA RDSON@VGS=-3V, ID=-30mA -50V -170mA 5Ω (typ) 6Ω (typ) 8Ω (typ) Equivalent Circuit BSS84S6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-5V (Note 3) Continuous Drain Current @ TA=85°C, VGS=-5V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation (Note 3) TA=25℃ TA=85℃ Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Tj, Tstg Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3.Surface mounted on...