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P-Channel MOSFET. BSS84S6R Datasheet

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P-Channel MOSFET. BSS84S6R Datasheet
















BSS84S6R MOSFET. Datasheet pdf. Equivalent













Part

BSS84S6R

Description

Dual P-Channel MOSFET



Feature


CYStech Electronics Corp. Spec. No. : C 465S6R Issued Date : 2012.12.25 Revised Date : Page No. : 1/ 8 Dual P-Channel MOSFET BSS84S6R Features • Low on-re sistance • High ESD capability • Hi gh speed switching • Low-voltage driv e(-2.5V) • Pb-free package BVDSS ID RDSON@VGS=-10V, ID=-100mA RDSON@VGS=-5V , ID=-100mA RDSON@VGS=-3V, ID=-30mA -5 0V -170mA 5Ω (typ) 6Ω (typ) .
Manufacture

CYStech

Datasheet
Download BSS84S6R Datasheet


CYStech BSS84S6R

BSS84S6R; 8Ω (typ) Equivalent Circuit BSS84S6R Outline SOT-363R Tr1 Tr2 The followin g characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25° C) Parameter Drain-Source Voltage Ga te-Source Voltage Continuous Drain Cur rent @ TA=25°C, VGS=-5V (Note 3) Conti nuous Drain Current @ TA=85°C, VGS=-5V (Note 3) Pulsed Drain Current (Notes 1 , 2) Maximum Power Di.


CYStech BSS84S6R

ssipation (Note 3) TA=25℃ TA=85℃ O perating Junction and Storage Temperatu re Symbol VDS VGS ID IDM PD Tj, Tstg Note : 1. Pulse width limited by maximu m junction temperature. 2. Pulse width 300μs, duty cycle≤2%. 3.Surface m ounted on .


CYStech BSS84S6R

.





Part

BSS84S6R

Description

Dual P-Channel MOSFET



Feature


CYStech Electronics Corp. Spec. No. : C 465S6R Issued Date : 2012.12.25 Revised Date : Page No. : 1/ 8 Dual P-Channel MOSFET BSS84S6R Features • Low on-re sistance • High ESD capability • Hi gh speed switching • Low-voltage driv e(-2.5V) • Pb-free package BVDSS ID RDSON@VGS=-10V, ID=-100mA RDSON@VGS=-5V , ID=-100mA RDSON@VGS=-3V, ID=-30mA -5 0V -170mA 5Ω (typ) 6Ω (typ) .
Manufacture

CYStech

Datasheet
Download BSS84S6R Datasheet




 BSS84S6R
CYStech Electronics Corp.
Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
Page No. : 1/ 8
Dual P-Channel MOSFET
BSS84S6R
Features
• Low on-resistance
• High ESD capability
• High speed switching
• Low-voltage drive(-2.5V)
• Pb-free package
BVDSS
ID
RDSON@VGS=-10V, ID=-100mA
RDSON@VGS=-5V, ID=-100mA
RDSON@VGS=-3V, ID=-30mA
-50V
-170mA
5Ω (typ)
6Ω (typ)
8Ω (typ)
Equivalent Circuit
BSS84S6R
Outline
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=-5V (Note 3)
Continuous Drain Current @ TA=85°C, VGS=-5V (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation
(Note 3)
TA=25
TA=85
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width300μs, duty cycle2%.
3.Surface mounted on 1 in² copper pad of FR-4 board, t5s.
Limits
-50
±20
-170
-120
-800
300
160
-55~+150
Unit
V
mA
mA
mW
°C
BSS84S6R
CYStek Product Specification




 BSS84S6R
CYStech Electronics Corp.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note)
Note : Surface mounted on 1 in² copper pad of FR-4 board, t5s.
Symbol
Rth,ja
Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
Page No. : 2/ 8
Limit
415
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Min.
Static
BVDSS
VGS(th)
IGSS
IDSS
-50
-1
-
-
-
-
*RDS(ON)
-
-
*GFS
80
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*VSD
-
Typ.
-
-1.4
-
-
-
5
6
8
-
24
4.6
1.5
2.7
3.3
7.4
5
1.4
0.36
0.29
-0.85
Max.
-
-2
±8
1
10
7
8.5
12
-
-
-
-
-
-
-
-
-
-
-
-1.2
Unit Test Conditions
V VGS=0, ID=-250μA
V VDS=VGS, ID=-250μA
VGS=±20V, VDS=0
μA VDS=50V, VGS=0
VDS=40V, VGS=0 (Tj=70°C)
VGS=-10V, ID=-100mA
Ω VGS=-5V, ID=-100mA
VGS=-3V, ID=-30mA
mS VDS=-10V, ID=-100mA
pF VDS=-25V, VGS=0, f=1MHz
ns
VDS=-25V, ID=-100mA, VGS=-5V,
RG=3.3Ω
nC VDS=-40V, ID=-170mA, VGS=-5V
V VGS=0V, IS=-130mA
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
BSS84S6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
BSS84S6R
CYStek Product Specification




 BSS84S6R
CYStech Electronics Corp.
Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
Page No. : 3/ 8
Typical Characteristics
Typical Output Characteristics
600
-VGS=5V
500
-VGS=4.5V
400
-VGS=4V
300 -VGS=3.5V
200 -VGS=3V
100 -VGS=2.5V
-VGS=2V
0
0 1 2 3 4 5 6 7 8 9 10
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
12
11
10 -VGS=3V
9
8
-VGS=5V
7
6
5
4
0.001
-VGS=10V
0.01 0.1
-ID, Drain Current(A)
1
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
20
18
16
14
12
10 ID=-100mA
8 ID=-30mA
6
4
2
0
0 2 4 6 8 10
-VGS, Gate-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
ID=-250μA,
VGS=0V
1.2
1
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
0
0.1 0.2 0.3 0.4
-IDR, Reverse Drain Current (A)
0.5
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8
1.6
1.4 VGS=-5V, ID=-100mA
1.2
1
0.8
0.6
0.4
-60
VGS=-10V, ID=-100mA
-20 20
60 100 140
Tj, Junction Temperature(°C)
180
BSS84S6R
CYStek Product Specification




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