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Planar Transistor. BTA1037N3 Datasheet

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Planar Transistor. BTA1037N3 Datasheet






BTA1037N3 Transistor. Datasheet pdf. Equivalent




BTA1037N3 Transistor. Datasheet pdf. Equivalent





Part

BTA1037N3

Description

General Purpose PNP Epitaxial Planar Transistor



Feature


CYStech Electronics Corp. General Purpos e PNP Epitaxial Planar Transistor BTA10 37N3 Spec. No. : C306N3 Issued Date : 2002.05.11 Revised Date : 2014.06.04 Pa ge No. : 1/8 Description • The BTA10 37N3 is designed for using in driver st age of AF amplifier and general purpose amplification. • Excellent hFE linea rity • Complementary to BTC2412N3. Pb-free lead plating and.
Manufacture

CYStech

Datasheet
Download BTA1037N3 Datasheet


CYStech BTA1037N3

BTA1037N3; halogen-free package Symbol BTA1037N3 Outline SOT-23 B:Base C:Collector E:Emitter Ordering Information Devi ce BTA1037N3-X-T1-G Package SOT-23 (Pb -free lead plating and halogen-free pac kage) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoH S compliant products, G for RoHS compli ant and green compound products Packing spec, T1 : 3000 pcs / t.


CYStech BTA1037N3

ape & reel, 7” reel Product rank, zero for no rank products Product name BTA 1037N3 CYStek Product Specification C YStech Electronics Corp. Absolute Maxi mum Ratings (Ta=25°C) Parameter Colle ctor-Base Voltage Collector-Emitter Vol tage Emitte .


CYStech BTA1037N3

.

Part

BTA1037N3

Description

General Purpose PNP Epitaxial Planar Transistor



Feature


CYStech Electronics Corp. General Purpos e PNP Epitaxial Planar Transistor BTA10 37N3 Spec. No. : C306N3 Issued Date : 2002.05.11 Revised Date : 2014.06.04 Pa ge No. : 1/8 Description • The BTA10 37N3 is designed for using in driver st age of AF amplifier and general purpose amplification. • Excellent hFE linea rity • Complementary to BTC2412N3. Pb-free lead plating and.
Manufacture

CYStech

Datasheet
Download BTA1037N3 Datasheet




 BTA1037N3
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTA1037N3
Spec. No. : C306N3
Issued Date : 2002.05.11
Revised Date : 2014.06.04
Page No. : 1/8
Description
The BTA1037N3 is designed for using in driver stage of AF amplifier and general purpose amplification.
Excellent hFE linearity
Complementary to BTC2412N3.
Pb-free lead plating and halogen-free package
Symbol
BTA1037N3
Outline
SOT-23
BBase
CCollector
EEmitter
Ordering Information
Device
BTA1037N3-X-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTA1037N3
CYStek Product Specification




 BTA1037N3
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
Limits
-100
-65
-6
-150
225
150
-55~+150
Spec. No. : C306N3
Issued Date : 2002.05.11
Revised Date : 2014.06.04
Page No. : 2/8
Unit
V
V
V
mA
mW
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
*VBE(on)
*VBE(on)
*hFE
fT
Cob
Min.
-100
-65
-6
-
-
-
-
-
-
-
-600
-
180
100
-
Typ.
-
-
-
-
-
-0.12
-0.06
-0.25
-0.75
-0.92
-
-
-
160
4.0
Classification Of hFE
Rank
R
Range
180~390
Max.
-
-
-
-0.1
-0.1
-0.3
-0.2
-0.5
-0.9
-1.2
-750
-820
820
-
5.0
Unit
V
V
V
μA
μA
V
V
V
V
V
mV
mV
-
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-80V
VEB=-6V
IC=-50mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
VCE=-6V, IC=-2mA
VCE=-6V, IC=-10mA
VCE=-6V, IC=-1mA
VCE=-12V, IC=-2mA, f=30MHz
VCB=-12V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
S
270~560
T
390~820
BTA1037N3
CYStek Product Specification




 BTA1037N3
CYStech Electronics Corp.
Spec. No. : C306N3
Issued Date : 2002.05.11
Revised Date : 2014.06.04
Page No. : 3/8
Typical Characteristics
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
1 2 34 5
Collector-to-Emitter Voltage---VCE(V)
6
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
1.5mA
1mA
IB=500uA
12345
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
Current Gain vs Collector Current
1000
Ta=125°C
Ta=125°C
Ta= 75°C
100 Ta= 25°C
100 Ta=25°C Ta=75°C
10
0.1
1000
VCE=1V
1 10 100
Collector Current---IC(mA)
Current Gain vs Collector Current
1000
Ta=125°C
VCE=6V
VCE=2V
10
0.1
1 10 100
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000
VCESAT=10IB
1000
100
Ta=25°C
Ta=75°C
100
0.1
1 10 100
Collector Current---IC(mA)
10
1000 1
125°C
75°C
25°C
10 100
Collector Current---IC(mA)
1000
BTA1037N3
CYStek Product Specification



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