BTA1797M3

CYStech Electronics Corp. Spec. No. : C623M3 Issued Date : 2013.03.19 Revised Date : 2018.12.17 Page No. : 1/8 Silicon PNP Epitaxial Planar Transistor BTA1797M3 BVCEO IC VCESAT(Max) -50V -3A -0.2V Description  Low saturation voltage, VCE(SAT) = -0.2V(max.) at IC/IB=-1A/-50mA.  High current capability.  Excellent DC current gain characteristics.  Pb-free lead plating and halogen-free package. Symbol BTA1797M3 Outline SOT-89 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Symbol VCBO VCEO VEBO IC ICP IB Power Dissipation PD Thermal Resistance, Junction to Ambient RθJA Operating Junction Temperature Range Tj Storage Temperature Range Tstg Note : 1. Single Pulse Pw≦300μs, Duty≦2%. 2. When mounted on FR-4 PCB with area measuring 10×10×1 mm. 3. When mounted on ceramic with area mea...