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PNP Transistor. BTA3513J3 Datasheet

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PNP Transistor. BTA3513J3 Datasheet






BTA3513J3 Transistor. Datasheet pdf. Equivalent




BTA3513J3 Transistor. Datasheet pdf. Equivalent





Part

BTA3513J3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PN P Epitaxial Planar Transistor BTA3513J3 Features • Low VCE(sat) • High BVC EO • Excellent current gain character istics • RoHS compliant package • P b-free lead-free and halogen-free packa ge BVCEO IC RCESAT Spec. No. : C607J3 Issued Date : 2010.12.08 Revised Date : 2017.07.13 Page No. : 1/8 -80V -8A 75 mΩ typ. Symbol BTA3513J3 O.
Manufacture

CYStech

Datasheet
Download BTA3513J3 Datasheet


CYStech BTA3513J3

BTA3513J3; utline TO-252(DPAK) B:Base C:Colle ctor E:Emitter B CE Ordering Inform ation Device BTA3513J3-0-T3-G Package TO-252 (RoHS compliant and halogen-fre e package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S fo r RoHS compliant products, G for RoHS c ompliant and green compound products P acking spec, T3:2500 pcs/tape & reel, 1 3” reel Product rank, z.


CYStech BTA3513J3

ero for no rank products Product name BTA3513J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C607J3 Issued Date : 2010.12.08 Revis ed Date : 2017.07.13 Page No. : 2/8 Ab solute Maximum Ratings (Ta=25°C) Para meter .


CYStech BTA3513J3

.

Part

BTA3513J3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PN P Epitaxial Planar Transistor BTA3513J3 Features • Low VCE(sat) • High BVC EO • Excellent current gain character istics • RoHS compliant package • P b-free lead-free and halogen-free packa ge BVCEO IC RCESAT Spec. No. : C607J3 Issued Date : 2010.12.08 Revised Date : 2017.07.13 Page No. : 1/8 -80V -8A 75 mΩ typ. Symbol BTA3513J3 O.
Manufacture

CYStech

Datasheet
Download BTA3513J3 Datasheet




 BTA3513J3
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTA3513J3
Features
Low VCE(sat)
High BVCEO
Excellent current gain characteristics
RoHS compliant package
Pb-free lead-free and halogen-free package
BVCEO
IC
RCESAT
Spec. No. : C607J3
Issued Date : 2010.12.08
Revised Date : 2017.07.13
Page No. : 1/8
-80V
-8A
75mΩ typ.
Symbol
BTA3513J3
Outline
TO-252(DPAK)
BBase
CCollector
EEmitter
B CE
Ordering Information
Device
BTA3513J3-0-T3-G
Package
TO-252
(RoHS compliant and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3:2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTA3513J3
CYStek Product Specification




 BTA3513J3
CYStech Electronics Corp.
Spec. No. : C607J3
Issued Date : 2010.12.08
Revised Date : 2017.07.13
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Note : 1. Single Pulse , Pw300μs,Duty2%.
2. When mounted on a PCB with the minimum pad size.
Limits
-80
-80
-5
-8
-16 (Note 1)
1.75 (Note 2)
20
71.4 (Note 2)
6.25
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCEO(SUS)
ICEO
ICES
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*RCE(sat)
*VBE(sat) 1
*VBE(sat) 2
*VBE(sat) 3
*hFE 1
*hFE 2
*hFE 3
fT
Cob
ton
tstg
tf
Min.
-80
-
-
-
-
-
-
-
-
-
-
160
180
100
-
-
-
-
-
Typ.
-
-
-
-
-0.2
-0.3
-0.6
75
-0.85
-0.9
-1.0
-
-
-
80
98
135
500
100
Max.
-
-10
-10
-50
-0.3
-0.5
-1.0
125
-1.0
-1.2
-1.5
-
360
-
-
-
-
-
-
Unit
V
μA
μA
μA
V
V
V
mΩ
V
V
V
-
-
-
MHz
pF
ns
ns
ns
Test Conditions
IC=-30mA, IB=0
VCE=-80V, IB=0
VCE=-80V, VBE=0
VEB=-5V, IC=0
IC=-3A, IB=-150mA
IC=-4A, IB=-200mA
IC=-8A, IB=-0.4A
IC=-8A, IB=-0.4A
IC=-3A, IB=-150mA
IC=-4A, IB=-200mA
IC=-8A, IB=-0.8A
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-2V, IC=-3A
VCE=-10V, IC=-500mA, f=20MHz
VCB=-10V, f=1MHz
IC=-5A, IB1=-IB2=-0.5A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
BTA3513J3
CYStek Product Specification




 BTA3513J3
CYStech Electronics Corp.
Spec. No. : C607J3
Issued Date : 2010.12.08
Revised Date : 2017.07.13
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
0.25
Emitter Grounded Output Characteristics
1.2
0.2
0.15
0.1
0.05
0
0
1mA
500uA
400uA
300uA
200uA
-IB=100uA
1 2 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
1
0.8
0.6
0.4
0.2
0
0
5mA
2.5mA
2mA
1.5mA
1mA
-IB=500uA
12345
-VCE, Collector-to-Emitter Voltage(V)
6
Emitter Grounded Output Characteristics
20mA
3
2
10mA
8mA
6mA
1
4mA
-IB=2mA
0
0 1 2 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
Emitter Grounded Output Characteristics
7
6 50mA
5
4
3 20mA
15mA
2
10mA
1 -IB=5mA
0
012 3456
-VCE, Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
1000
125℃
Current Gain vs Collector Current
1000
125℃
100
75℃
25℃
-VCE=1V
10
10 100 1000
-IC, Collector Current(mA)
10000
100
75℃
25℃
-VCE=2V
10
10
100 1000
-IC, Collector Current(mA)
10000
BTA3513J3
CYStek Product Specification



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