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PNP Transistor. BTB1188AM3 Datasheet

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PNP Transistor. BTB1188AM3 Datasheet






BTB1188AM3 Transistor. Datasheet pdf. Equivalent




BTB1188AM3 Transistor. Datasheet pdf. Equivalent





Part

BTB1188AM3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Spec. No. : C 812M3-A Issued Date : 2011.02.17 Revise d Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB1188AM3 BVCEO IC RCESAT(typ) -40V -2A 0.22Ω Features • Low VCE(sat), VCE(sat)=- 0.65 V (typical), at IC / IB = -3A / -0 .1A • Excellent current gain characte ristics • Complementary to BTD1766AM3 • Pb-free lead plating p.
Manufacture

CYStech

Datasheet
Download BTB1188AM3 Datasheet


CYStech BTB1188AM3

BTB1188AM3; ackage Symbol BTB1188AM3 Outline SOT-8 9 B:Base C:Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25°C ) Parameter Collector-Base Voltage Coll ector-Emitter Voltage Emitter-Base Volt age Collector Current (DC) Collector Cu rrent (Pulse) Power Dissipation Power D issipation ESD susceptibility Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO I.


CYStech BTB1188AM3

C ICP Pd Pd Tj ; Tstg Limits -50 -40 -6 -2 -4 (Note 1) 0.6 2 (Note 2) 8000 (No te 3 ) -55~+150 Unit V V V A A W W V C BTB1188AM3 CYStek Product Specific ation CYStech Electronics Corp. Spec. No. : C812M3-A Issued Date : 2011.02.1 7 Revised .


CYStech BTB1188AM3

.

Part

BTB1188AM3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Spec. No. : C 812M3-A Issued Date : 2011.02.17 Revise d Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB1188AM3 BVCEO IC RCESAT(typ) -40V -2A 0.22Ω Features • Low VCE(sat), VCE(sat)=- 0.65 V (typical), at IC / IB = -3A / -0 .1A • Excellent current gain characte ristics • Complementary to BTD1766AM3 • Pb-free lead plating p.
Manufacture

CYStech

Datasheet
Download BTB1188AM3 Datasheet




 BTB1188AM3
CYStech Electronics Corp.
Spec. No. : C812M3-A
Issued Date : 2011.02.17
Revised Date :
Page No. : 1/7
Low Vcesat PNP Epitaxial Planar Transistor
BTB1188AM3
BVCEO
IC
RCESAT(typ)
-40V
-2A
0.22Ω
Features
Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A
Excellent current gain characteristics
Complementary to BTD1766AM3
Pb-free lead plating package
Symbol
BTB1188AM3
Outline
SOT-89
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Pd
Tj ; Tstg
Limits
-50
-40
-6
-2
-4 (Note 1)
0.6
2 (Note 2)
8000 (Note 3 )
-55~+150
Unit
V
V
V
A
A
W
W
V
°C
BTB1188AM3
CYStek Product Specification




 BTB1188AM3
CYStech Electronics Corp.
Spec. No. : C812M3-A
Issued Date : 2011.02.17
Revised Date :
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Note : 1. Single Pulse , Pw=10ms
2. When mounting on a 40 ×40 ×0.7 mm ceramic board.
3. Human body model, 1.5kΩ in series with 100pF
Symbol
Rth,j-c
Rth,j-a
Rth,j-a
Value
30.4
208
125
Unit
°C/W
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*hFE
fT
Cob
Min.
-50
-40
-6
-
-
-
-
-
180
-
-
Typ.
-
-
-
-
-
-0.2
-0.45
-0.65
-
180
20
Max.
-
-
-
-100
-100
-0.4
-0.8
-1
560
-
-
Unit
V
V
V
nA
nA
V
V
V
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-50V, IE=0
VEB=-6V, IC=0
IC=-700mA, IB=-35mA
IC=-2A, IB=-0.2A
IC=-3A, IB=-0.1A
VCE=-3V, IC=-0.5A
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, f =1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Classification Of hFE
Rank
Range
R
180~390
S
270~560
Ordering Information
Device
BTB1188AM3
Package
SOT-89
(Pb-free lead plating)
Shipping
1000 pcs / Tape & Reel
BTB1188AM3
CYStek Product Specification




 BTB1188AM3
CYStech Electronics Corp.
Spec. No. : C812M3-A
Issued Date : 2011.02.17
Revised Date :
Page No. : 3/7
Typical Characteristics
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
1 2 34 5
Collector-to-Emitter Voltage---VCE(V)
6
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
12345
Collector-to-Emitter Voltage---VCE(V)
6
Emitter Grounded Output Characteristics
4
20mA
3
10mA
2 8mA
6mA
1 4mA
IB=2mA
0
01 234 56
Collector-to-Emitter Voltage---VCE(V)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Emitter Grounded Output Characteristics
50mA
20mA
15mA
10mA
IB=5mA
12 3 45
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
VCE=5V
100 VCE=2V
10000
Saturation Voltage vs Collector Current
1000
100
VCESAT@IC=50IB
10
1
VCE=1V
10 100 1000
Collector Current---IC(mA)
10000
10
1
1
VCESAT=20IB
VCESAT=10IB
10 100 1000
Collector Current---IC(mA)
10000
BTB1188AM3
CYStek Product Specification



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