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PNP Transistor. BTB1188M3R Datasheet

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PNP Transistor. BTB1188M3R Datasheet






BTB1188M3R Transistor. Datasheet pdf. Equivalent




BTB1188M3R Transistor. Datasheet pdf. Equivalent





Part

BTB1188M3R

Description

PNP Transistor



Feature


CYStech Electronics Corp. Spec. No. : C 623M3 Issued Date : 2003.05.25 Revised Date : 2013.08.12 Page No. : 1/7 Low V cesat PNP Epitaxial Planar Transistor B TB1188M3R BVCEO IC RCESAT(typ) -30V - 2A 0.22Ω Features • Low VCE(sat), V CE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A • Excellent current gain characteristics • Complementary to B TD1766M3 • Pb-free lead p.
Manufacture

CYStech

Datasheet
Download BTB1188M3R Datasheet


CYStech BTB1188M3R

BTB1188M3R; lating and halogen-free package Symbol BTB1188M3R Outline SOT-89 B:Base C Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collecto r-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Curren t (Pulse) Power Dissipation VCBO VCEO VEBO IC ICP Pd Power Dissipation Pd ESD susceptibility Opera.


CYStech BTB1188M3R

ting Junction Temperature Range Tj Sto rage Temperature Range Tstg Note : 1. Single Pulse , Pw=10ms 2. When mountin g on a 40 ×40 ×0.7 mm ceramic board. 3. Human body model, 1.5kΩ in series with 100pF BTA1797M3 Limits -40 -30 - 5 -2 -5 ( .


CYStech BTB1188M3R

.

Part

BTB1188M3R

Description

PNP Transistor



Feature


CYStech Electronics Corp. Spec. No. : C 623M3 Issued Date : 2003.05.25 Revised Date : 2013.08.12 Page No. : 1/7 Low V cesat PNP Epitaxial Planar Transistor B TB1188M3R BVCEO IC RCESAT(typ) -30V - 2A 0.22Ω Features • Low VCE(sat), V CE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A • Excellent current gain characteristics • Complementary to B TD1766M3 • Pb-free lead p.
Manufacture

CYStech

Datasheet
Download BTB1188M3R Datasheet




 BTB1188M3R
CYStech Electronics Corp.
Spec. No. : C623M3
Issued Date : 2003.05.25
Revised Date : 2013.08.12
Page No. : 1/7
Low Vcesat PNP Epitaxial Planar Transistor
BTB1188M3R
BVCEO
IC
RCESAT(typ)
-30V
-2A
0.22Ω
Features
Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A
Excellent current gain characteristics
Complementary to BTD1766M3
Pb-free lead plating and halogen-free package
Symbol
BTB1188M3R
Outline
SOT-89
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
VCBO
VCEO
VEBO
IC
ICP
Pd
Power Dissipation
Pd
ESD susceptibility
Operating Junction Temperature Range
Tj
Storage Temperature Range
Tstg
Note : 1. Single Pulse , Pw=10ms
2. When mounting on a 40 ×40 ×0.7 mm ceramic board.
3. Human body model, 1.5kΩ in series with 100pF
BTA1797M3
Limits
-40
-30
-5
-2
-5 (Note 1)
0.5
2 (Note 2)
8000 (Note 3 )
-55~+150
-55~+150
Unit
V
V
V
A
A
W
W
V
°C
°C
CYStek Product Specification




 BTB1188M3R
CYStech Electronics Corp.
Spec. No. : C623M3
Issued Date : 2003.05.25
Revised Date : 2013.08.12
Page No. : 2/7
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance, Junction-to-Ambient (Note)
RθJA 62.5 °C/W
Thermal Resistance, Junction-to-Case
RθJC 18 °C/W
Note : When mounting on a 40 ×40 ×0.7 mm ceramic board; 250°C/W when mounted on minimum copper pad.
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-40
-30
-5
-
-
-
180
-
-
Typ.
-
-
-
-
-
-
-
100
50
Max.
-
-
-
-1
-1
-1
560
-
-
Classification Of hFE
Rank
Range
R
180~390
S
270~560
Unit
V
V
V
μA
μA
V
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
IC=-3A, IB=-0.1A
VCE=-3V, IC=-0.5A
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, f =1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
BTB1188M3R-R-T2-G
BTB1188M3R-S-T2-G
HFE rank
R
S
Package
Shipping
SOT-89
1000 pcs / Tape
(Pb-free lead plating and halogen-free package)
& Reel
Recommended soldering footprint
BTA1797M3
CYStek Product Specification




 BTB1188M3R
CYStech Electronics Corp.
Spec. No. : C623M3
Issued Date : 2003.05.25
Revised Date : 2013.08.12
Page No. : 3/7
Typical Characteristics
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
1 2 34 5
Collector-to-Emitter Voltage---VCE(V)
6
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
12345
Collector-to-Emitter Voltage---VCE(V)
6
Emitter Grounded Output Characteristics
4
20mA
3
10mA
2 8mA
6mA
1 4mA
IB=2mA
0
01 234 56
Collector-to-Emitter Voltage---VCE(V)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Emitter Grounded Output Characteristics
50mA
20mA
15mA
10mA
IB=5mA
12 3 45
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
VCE=5V
10000
Saturation Voltage vs Collector Current
1000
100
10
1
VCE=2V
VCE=1V
10 100 1000
Collector Current---IC(mA)
10000
100 VCESAT@IC=40IB
10
1
1
VCESAT=20IB
VCESAT=10IB
10 100 1000
Collector Current---IC(mA)
10000
BTB1188M3R
CYStek Product Specification



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