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PNP Transistor. BTB1198M3 Datasheet

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PNP Transistor. BTB1198M3 Datasheet






BTB1198M3 Transistor. Datasheet pdf. Equivalent




BTB1198M3 Transistor. Datasheet pdf. Equivalent





Part

BTB1198M3

Description

PNP Transistor



Feature


CYStech Electronics Corp. General Purpos e PNP Epitaxial Planar Transistor BTB11 98M3 Spec. No. : C824M3 Issued Date : 2007.05.04 Revised Date : 2014.02.24 Pa ge No. : 1/6 Features • High breakdo wn voltage, BVCEO≥ -100V • Large co ntinuous collector current capability Low collector saturation voltage • Complementary to BTD5213M3 • Pb-free lead plating and halogen-free.
Manufacture

CYStech

Datasheet
Download BTB1198M3 Datasheet


CYStech BTB1198M3

BTB1198M3; package Symbol BTB1198M3 Outline SOT- 89 B:Base C:Collector E:Emitter BCE Ordering Information Device BTB1 198M3-0-T2-G Package Shipping SOT-89 (Pb-free lead plating and halogen-free package) 1000 pcs / Tape & Reel Envi ronment friendly grade : S for RoHS com pliant products, G for RoHS compliant a nd green compound products Packing spec , T2 :1000 pcs/tape & re.


CYStech BTB1198M3

el, 7” reel Product rank, zero for no rank products Product name BTB1198M3 CYStek Product Specification CYStech E lectronics Corp. Spec. No. : C824M3 Is sued Date : 2007.05.04 Revised Date : 2 014.02.24 Page No. : 2/6 Absolute Maxi mum Rat .


CYStech BTB1198M3

.

Part

BTB1198M3

Description

PNP Transistor



Feature


CYStech Electronics Corp. General Purpos e PNP Epitaxial Planar Transistor BTB11 98M3 Spec. No. : C824M3 Issued Date : 2007.05.04 Revised Date : 2014.02.24 Pa ge No. : 1/6 Features • High breakdo wn voltage, BVCEO≥ -100V • Large co ntinuous collector current capability Low collector saturation voltage • Complementary to BTD5213M3 • Pb-free lead plating and halogen-free.
Manufacture

CYStech

Datasheet
Download BTB1198M3 Datasheet




 BTB1198M3
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTB1198M3
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 1/6
Features
High breakdown voltage, BVCEO-100V
Large continuous collector current capability
Low collector saturation voltage
Complementary to BTD5213M3
Pb-free lead plating and halogen-free package
Symbol
BTB1198M3
Outline
SOT-89
BBase
CCollector
EEmitter
BCE
Ordering Information
Device
BTB1198M3-0-T2-G
Package
Shipping
SOT-89
(Pb-free lead plating and halogen-free package)
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTB1198M3
CYStek Product Specification




 BTB1198M3
CYStech Electronics Corp.
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current(DC)
Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Thermal Resistance, Junction to Ambient
RθJA
Operating Junction Temperature Range
Tj
Storage Temperature Range
Tstg
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
Limits
-120
-100
-5
-1
-2
-200
0.6
1 (Note 1)
2 (Note 2)
208
83.3 (Note 1)
59.5 (Note 2)
-65~+150
-65~+150
Unit
V
A
mA
W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
-120
-100
-5
-
-
-
-
-
-
-
160
180
40
150
-
Typ.
-
-
-
-
-
-0.1
-0.16
-0.3
-0.89
-
-
-
-
200
11
Max.
-
-
-
-100
-20
-0.2
-0.3
-0.5
-1.1
-1
-
390
-
-
15
Unit
V
V
V
nA
nA
V
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=-100μA
IC=-10mA
IE=-100μA
VCB=-100V
VEB=-4V
IC=-250mA, IB=-25mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-1mA
VCE=-2V, IC=-5mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTB1198M3
CYStek Product Specification




 BTB1198M3
CYStech Electronics Corp.
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current
1000
VCE=3V
100 VCE=2V
VCE=1V
10000
1000
100
Saturation Voltage vs Collector Current
VCESAT
IC=100IB
IC=50IB
IC=20IB
IC=10IB
10
1
10 100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
1000
10
1
1000
10 100
Collector Current---IC(mA)
On Voltage vs Collector Current
1000
VBESAT@IC=10IB
VBEON@VCE=3V
100
1
2.5
2
1.5
1
0.5
0
0
10 100
Collector Current---IC(mA)
Power Derating Curves
See Note 2 on page 1
100
1000 1
10 100
Collector Current---IC(mA)
1000
Transition Frequency vs Collector Current
1000
See Note 1 on page 1
100
50 100 150
Ambient Temperature---TA(℃)
200
10
1
10 100
Collector Current---IC(mA)
1000
BTB1198M3
CYStek Product Specification



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