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PNP Transistor. BTB1199M3 Datasheet

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PNP Transistor. BTB1199M3 Datasheet
















BTB1199M3 Transistor. Datasheet pdf. Equivalent













Part

BTB1199M3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1199M3 Spec. No. : C315M3-A Issued Date : 200 8.06.04 Revised Date : 2013.08.05 Page No. : 1/8 Features • Low VCE(sat), V CE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA • Pb-free package Sym bol BTB1199M3 Outline SOT-89 B:Base C:Collector E:Emitter BCE Absolu te Maximum Ratings (Ta=25°C).
Manufacture

CYStech

Datasheet
Download BTB1199M3 Datasheet


CYStech BTB1199M3

BTB1199M3; Parameter Collector-Base Voltage Colle ctor-Emitter Voltage Emitter-Base Volta ge Collector Current(DC) Peak Collector Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IBM Power Dissipatio n Pd Junction Temperature Tj Storag e Temperature Tstg Note : *1 Single p ulse, Pw=10ms *2 When mounted on FR-4 PCB with area measuring 10×10×1 mm *3 When mounted on cer.


CYStech BTB1199M3

amic with area measuring 40×40×1 mm B TB1199M3 Limits -40 -25 -5 -2 -4 -200 0.6 1 *2 2 *3 150 -55~+150 Unit V V V A A mA W °C °C CYStek Product Specif ication CYStech Electronics Corp. Spe c. No. : C315M3-A Issued Date : 2008.06 .04 Revised .


CYStech BTB1199M3

.





Part

BTB1199M3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1199M3 Spec. No. : C315M3-A Issued Date : 200 8.06.04 Revised Date : 2013.08.05 Page No. : 1/8 Features • Low VCE(sat), V CE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA • Pb-free package Sym bol BTB1199M3 Outline SOT-89 B:Base C:Collector E:Emitter BCE Absolu te Maximum Ratings (Ta=25°C).
Manufacture

CYStech

Datasheet
Download BTB1199M3 Datasheet




 BTB1199M3
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1199M3
Spec. No. : C315M3-A
Issued Date : 2008.06.04
Revised Date : 2013.08.05
Page No. : 1/8
Features
Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA
Pb-free package
Symbol
BTB1199M3
Outline
SOT-89
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Peak Collector Current
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Power Dissipation
Pd
Junction Temperature
Tj
Storage Temperature
Tstg
Note : *1 Single pulse, Pw=10ms
*2 When mounted on FR-4 PCB with area measuring 10×10×1 mm
*3 When mounted on ceramic with area measuring 40×40×1 mm
BTB1199M3
Limits
-40
-25
-5
-2
-4
-200
0.6
1 *2
2 *3
150
-55~+150
Unit
V
V
V
A
A
mA
W
°C
°C
CYStek Product Specification




 BTB1199M3
CYStech Electronics Corp.
Spec. No. : C315M3-A
Issued Date : 2008.06.04
Revised Date : 2013.08.05
Page No. : 2/8
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
Min.
-40
-25
-5
-
-
-
-0.5
120
40
-
-
Typ.
-
-
-
-
-
-0.24
-
-
-
120
19
Max.
-
-
-
-100
-100
-0.4
-0.8
390
-
-
-
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-40V, IE=0
VEB=-5V, IC=0
IC=-500mA, IB=-20mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-700mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Classification of hFE 1
Rank
Range
Q
120~270
R
180~390
Ordering Information
Device
BTB1199M3
Package
SOT-89
(Pb-free)
Shipping
1000 pcs / Tape & Reel
Marking
BA
Recommended Storage Condition:
Temperature : 30 °C
Humidity : 60% RH
BTB1199M3
CYStek Product Specification




 BTB1199M3
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C315M3-A
Issued Date : 2008.06.04
Revised Date : 2013.08.05
Page No. : 3/8
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
-IB=100uA
1 2 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
-IB=500uA
12345
-VCE, Collector-to-Emitter Voltage(V)
6
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
20mA
8mA
6mA
4mA
-IB=2mA
12 345
-VCE, Collector-to-Emitter Voltage(V)
6
2.5
2
1.5
1
0.5
0
0
Emitter Grounded Output Characteristics
50mA
25mA
10mA
-IB=5mA
12 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
1000
VCE=-1V
Current Gain vs Collector Current
1000
VCE=-2V
100 Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
10
1
10 100 1000
-IC, Collector Current(mA)
10000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10 100 1000
-IC, Collector Current(mA)
10000
BTB1199M3
CYStek Product Specification




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