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PNP Transistor. BTB1236AJ3 Datasheet

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PNP Transistor. BTB1236AJ3 Datasheet






BTB1236AJ3 Transistor. Datasheet pdf. Equivalent




BTB1236AJ3 Transistor. Datasheet pdf. Equivalent





Part

BTB1236AJ3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Spec. No. : C 854J3 Issued Date : 2010.12.31 Revised Date : 2017.05.11 Page No. : 1/6 Silic on PNP Epitaxial Planar Transistor BTB1 236AJ3 BVCEO IC RCESAT(MAX) -160V -1. 5A 600mΩ Description • High BVCEO High current capability • RoHS com pliant package • Pb-free lead plating and halogen-free package Symbol BTB12 36AJ3 Outline TO-252(DPAK).
Manufacture

CYStech

Datasheet
Download BTB1236AJ3 Datasheet


CYStech BTB1236AJ3

BTB1236AJ3; B:Base C:Collector E:Emitter B CE Ordering Information Device BTB123 6AJ3-0-T3-G Package TO-252 (RoHS compl iant and halogen-free package) Shippin g 2500 pcs / Tape & Reel Environment f riendly grade : S for RoHS compliant pr oducts, G for RoHS compliant and green compound products Packing spec, T3:250 0 pcs/tape & reel, 13” reel Product rank, zero for no rank pro.


CYStech BTB1236AJ3

ducts Product name BTB1236AJ3 CYStek Product Specification CYStech Electron ics Corp. Spec. No. : C854J3 Issued Da te : 2010.12.31 Revised Date : 2017.05. 11 Page No. : 2/6 Absolute Maximum Rat ings (Ta=25°C) Parameter Collector-B ase Volt .


CYStech BTB1236AJ3

.

Part

BTB1236AJ3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Spec. No. : C 854J3 Issued Date : 2010.12.31 Revised Date : 2017.05.11 Page No. : 1/6 Silic on PNP Epitaxial Planar Transistor BTB1 236AJ3 BVCEO IC RCESAT(MAX) -160V -1. 5A 600mΩ Description • High BVCEO High current capability • RoHS com pliant package • Pb-free lead plating and halogen-free package Symbol BTB12 36AJ3 Outline TO-252(DPAK).
Manufacture

CYStech

Datasheet
Download BTB1236AJ3 Datasheet




 BTB1236AJ3
CYStech Electronics Corp.
Spec. No. : C854J3
Issued Date : 2010.12.31
Revised Date : 2017.05.11
Page No. : 1/6
Silicon PNP Epitaxial Planar Transistor
BTB1236AJ3
BVCEO
IC
RCESAT(MAX)
-160V
-1.5A
600mΩ
Description
High BVCEO
High current capability
RoHS compliant package
Pb-free lead plating and halogen-free package
Symbol
BTB1236AJ3
Outline
TO-252(DPAK)
BBase
CCollector
EEmitter
B CE
Ordering Information
Device
BTB1236AJ3-0-T3-G
Package
TO-252
(RoHS compliant and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3:2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTB1236AJ3
CYStek Product Specification




 BTB1236AJ3
CYStech Electronics Corp.
Spec. No. : C854J3
Issued Date : 2010.12.31
Revised Date : 2017.05.11
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
TA=25°C
TC=25°C
Operating Junction Temperature Range
Storage Temperature Range
Note : Single Pulse Pw350μs, Duty2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
Limits
-180
-160
-5
-1.5
-3 (Note)
1
10
-55~+150
-55~+150
Unit
V
V
V
A
A
W
W
°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
125
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
hFE1
hFE2
fT
Cob
Min.
-180
-160
-5
-
-
-
-
180
30
-
-
Typ.
-
-
-
-
-
-
-
-
-
140
27
Max.
-
-
-
-1
-1
-0.6
-1.5
390
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-160V, IE=0
VEB=-4V, IC=0
IC=-1A, IB=-100mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-150mA
VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
BTB1236AJ3
CYStek Product Specification




 BTB1236AJ3
CYStech Electronics Corp.
Spec. No. : C854J3
Issued Date : 2010.12.31
Revised Date : 2017.05.11
Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current
1000
VCE=5V
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
100
10
1
1
10000
10 100 1000
Collector Current---IC(mA)
On Voltage vs Collector Current
VBE(ON)@VCE=5V
10000
1000
100
1
12
10
8
6
4
2
0
0
BTB1236AJ3
10 100 1000
Collector Current---IC(mA)
Power Derating Curve
10000
50 100 150
Case Temperature---TC(℃)
200
10
1
1.2
1
0.8
0.6
0.4
0.2
0
0
10 100 1000
Collector Current---IC(mA)
Power Derating Curve
10000
50 100 150
Ambient Temperature---TA(℃)
200
Safe Operating Area
10
IC(max) (pulsed)
PT=1ms
1
IC(max)
(continuous)
PT=100ms
0.1
PT=1s
0.01
1
10 100
Forward Voltage---VCE(V)
1000
CYStek Product Specification



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