CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1386M3
Spec. No. : C815M3 Issued Date : 2005.03...
CYStech Electronics Corp.
Low Vcesat
PNP Epitaxial Planar
Transistor
BTB1386M3
Spec. No. : C815M3 Issued Date : 2005.03.25 Revised Date : 2014.05.20 Page No. : 1/6
Features
Low VCE(sat), VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA Excellent DC current gain characteristics Complementary to BTD2098M3 Pb-free lead plating and halogen-free package
Symbol
BTB1386M3
Outline
SOT-89
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction and Storage Temperature Range Note : 1. Single Pulse Pw=10ms
2. When mounted on a 40 ×40 ×0.7 mm ceramic board.
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max (Note )
Note : When mounting on a 40 ×40 ×0.7 mm ceramic board.
BTB1386M3
Symbol VCBO VCEO VEBO IC ICP Pd Pd...
