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PNP Transistor. BTB1590N3 Datasheet

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PNP Transistor. BTB1590N3 Datasheet






BTB1590N3 Transistor. Datasheet pdf. Equivalent




BTB1590N3 Transistor. Datasheet pdf. Equivalent





Part

BTB1590N3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low VCESAT PNP Epitaxial Planar Transistor BTB1590N3 Spec. No. : C313N3 Issued Date : 2002. 06.18 Revised Date : 2014.01.13 Page No . : 1/8 Features • Low VCE(SAT), VCE (SAT)=-0.21V(typically) at IC=-500mA/IB =-50mA. • Complementary to BTD2444N3. • Pb-free lead plating and halogen-f ree package Symbol BTB1590N3 Outline SOT-23 B:Base C:Collect.
Manufacture

CYStech

Datasheet
Download BTB1590N3 Datasheet


CYStech BTB1590N3

BTB1590N3; or E:Emitter Ordering Information Dev ice BTB1590N3-X-T1-G Package SOT-23 (P b-free lead plating and halogen-free pa ckage) Shipping 3000 pcs / tape & reel Environment friendly grade : S for Ro HS compliant products, G for RoHS compl iant and green compound products Packin g spec, T1 : 3000 pcs / tape & reel, 7 reel Product rank, zero for no rank products Product name.


CYStech BTB1590N3

BTB1590N3 CYStek Product Specificatio n CYStech Electronics Corp. Spec. No. : C313N3 Issued Date : 2002.06.18 Revi sed Date : 2014.01.13 Page No. : 2/8 A bsolute Maximum Ratings (Ta=25°C) Para meter Collector-Base Voltage Collector- Emitter Vol .


CYStech BTB1590N3

.

Part

BTB1590N3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low VCESAT PNP Epitaxial Planar Transistor BTB1590N3 Spec. No. : C313N3 Issued Date : 2002. 06.18 Revised Date : 2014.01.13 Page No . : 1/8 Features • Low VCE(SAT), VCE (SAT)=-0.21V(typically) at IC=-500mA/IB =-50mA. • Complementary to BTD2444N3. • Pb-free lead plating and halogen-f ree package Symbol BTB1590N3 Outline SOT-23 B:Base C:Collect.
Manufacture

CYStech

Datasheet
Download BTB1590N3 Datasheet




 BTB1590N3
CYStech Electronics Corp.
Low VCESAT PNP Epitaxial Planar Transistor
BTB1590N3
Spec. No. : C313N3
Issued Date : 2002.06.18
Revised Date : 2014.01.13
Page No. : 1/8
Features
Low VCE(SAT), VCE(SAT)=-0.21V(typically) at IC=-500mA/IB=-50mA.
Complementary to BTD2444N3.
Pb-free lead plating and halogen-free package
Symbol
BTB1590N3
Outline
SOT-23
BBase
CCollector
EEmitter
Ordering Information
Device
BTB1590N3-X-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTB1590N3
CYStek Product Specification




 BTB1590N3
CYStech Electronics Corp.
Spec. No. : C313N3
Issued Date : 2002.06.18
Revised Date : 2014.01.13
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Single pulse, Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
RθJA
Tj
Tstg
Limits
-40
-25
-6
-1.5
-3 (Note)
225
556
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
VBE(ON)
*hFE 1
*hFE 2
fT
Cob
Min.
-40
-25
-6
-
-
-
-
-
-
120
80
-
-
Typ.
-
-
-
-
-
-
-0.21
-
-
-
-
270
12
Max.
-
-
-
-100
-100
-0.3
-0.4
-0.5
-1
560
-
-
-
Unit
V
V
V
nA
nA
V
V
V
V
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-35V, IE=0
VEB=-6V, IC=0
IC=-400mA, IB=-20mA
IC=-500mA, IB=-50mA
IC=-800mA, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-3V, IC=-100mA
VCE=-3V, IC=-800mA
VCE=-5V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Classification Of hFE 1
Rank
Range
Q
120~270
R
180~390
S
270~560
BTB1590N3
CYStek Product Specification




 BTB1590N3
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C313N3
Issued Date : 2002.06.18
Revised Date : 2014.01.13
Page No. : 3/8
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
-IB=100uA
1 2 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
-IB=500uA
12345
-VCE, Collector-to-Emitter Voltage(V)
6
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
20mA
8mA
6mA
4mA
-IB=2mA
12 345
-VCE, Collector-to-Emitter Voltage(V)
6
2.5
2
1.5
1
0.5
0
0
Emitter Grounded Output Characteristics
50mA
25mA
10mA
-IB=5mA
12 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
1000
VCE=-1V
Current Gain vs Collector Current
1000
VCE=-2V
100 Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
10
1
10 100 1000
-IC, Collector Current(mA)
10000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10 100 1000
-IC, Collector Current(mA)
10000
BTB1590N3
CYStek Product Specification



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