BTB5213L3

CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTB5213L3 Spec. No. : C824L3 Issued Date : 2007.03.29 Revised Date : 2010.09.06 Page No. : 1/7 Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features High collector current and low VCE(SAT). Complement to BTD5213L3. Pb-free lead plating package. Symbol BTB5213L3 Outline SOT-223 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg BTB5213L3 BCE Limits -100 -80 -5 -1 -1.5 2 150 -55~+150 Unit V V V A A W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824L3 Issued Date : 2007.03.29 Revised Date : 2010.09.06 Page No. : 2/7 Characte...