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PNP Transistor. BTB5240N3 Datasheet

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PNP Transistor. BTB5240N3 Datasheet






BTB5240N3 Transistor. Datasheet pdf. Equivalent




BTB5240N3 Transistor. Datasheet pdf. Equivalent





Part

BTB5240N3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Spec. No. : C 195N3 Issued Date : 2013.05.10 Revised Date : Page No. : 1/8 Low VCE(sat) PNP Epitaxial Planar Transistor BTB5240N3 BVCEO IC RCESAT(typ.) -40V -2A 0.106 Features • Excellent DC current ga in characteristics • Low Saturation V oltage VCE(sat)=-0.18V(typ)(IC=-2A, IB= -200mA). • Pb-free lead plating and h alogen-free package Symb.
Manufacture

CYStech

Datasheet
Download BTB5240N3 Datasheet


CYStech BTB5240N3

BTB5240N3; ol BTB5240N3 Outline SOT-23 B:Base C :Collector E:Emitter Absolute Maxi mum Ratings (Ta=25°C) Parameter Symb ol Limits Collector-Base Voltage Coll ector-Emitter Voltage Emitter-Base Volt age Collector Current(DC) Collector Cur rent(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range S torage Temperature Range .


CYStech BTB5240N3

VCBO VCEO VEBO IC ICP PD RθJA Tj Tstg -40 -40 -7 -2 -3 300 (Note 2) 480 (Not e 3) 417 260 -65~+150 -65~+150 Note 1: Single pulse, Pw≤10ms, Duty Cycle≤ 30%. 2. Device mounted on a FR-4 board of 2 oz, single sided copper, with area of minimum .


CYStech BTB5240N3

.

Part

BTB5240N3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Spec. No. : C 195N3 Issued Date : 2013.05.10 Revised Date : Page No. : 1/8 Low VCE(sat) PNP Epitaxial Planar Transistor BTB5240N3 BVCEO IC RCESAT(typ.) -40V -2A 0.106 Features • Excellent DC current ga in characteristics • Low Saturation V oltage VCE(sat)=-0.18V(typ)(IC=-2A, IB= -200mA). • Pb-free lead plating and h alogen-free package Symb.
Manufacture

CYStech

Datasheet
Download BTB5240N3 Datasheet




 BTB5240N3
CYStech Electronics Corp.
Spec. No. : C195N3
Issued Date : 2013.05.10
Revised Date :
Page No. : 1/8
Low VCE(sat) PNP Epitaxial Planar Transistor
BTB5240N3
BVCEO
IC
RCESAT(typ.)
-40V
-2A
0.106Ω
Features
Excellent DC current gain characteristics
Low Saturation Voltage
VCE(sat)=-0.18V(typ)(IC=-2A, IB=-200mA).
Pb-free lead plating and halogen-free package
Symbol
BTB5240N3
Outline
SOT-23
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(Note 1)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
-40
-40
-7
-2
-3
300 (Note 2)
480 (Note 3)
417
260
-65~+150
-65~+150
Note 1: Single pulse, Pw10ms, Duty Cycle30%.
2. Device mounted on a FR-4 board of 2 oz, single sided copper, with area of minimum pad size.
3. Device mounted on a FR-4 board of 2 oz, single sided copper, with area of 1 cm².
Unit
V
V
V
A
mW
°C/W
°C
°C
BTB5240N3
CYStek Product Specification




 BTB5240N3
CYStech Electronics Corp.
Spec. No. : C195N3
Issued Date : 2013.05.10
Revised Date :
Page No. : 2/8
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VCE(sat) 5
*RCESAT
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
fT
Cob
Min.
-40
-40
-7
-
-
-
-
-
-
-
-
-
-
300
260
210
100
100
-
Typ.
-
-
-
-
-
-53
-53
-105
-106
-180
106
-0.96
-0.65
-
-
-
-
190
26
Max.
-
-
-
-100
-100
-80
-80
-160
-160
-230
160
-1.1
-0.75
600
-
-
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
mV
mV
mΩ
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-40V
VEB=-5V
IC=-100mA, IB=-1mA
IC=-500mA, IB=-50mA
IC=-750mA, IB=-15mA
IC=-1A, IB=-50mA
IC=-2A, IB=-200mA
IC=-500mA, IB=-50mA
IC=-2A, IB=-200mA
VCE=-2V, IC=-100mA
VCE=-2V, IC=-100mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-2V, IC=-2A
VCE=-10V, IC=-100mA, f=100MHz
VCB=-10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
Package
BTB5240N3-0-T1-G
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
BTB5240N3
CYStek Product Specification




 BTB5240N3
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C195N3
Issued Date : 2013.05.10
Revised Date :
Page No. : 3/8
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
-IB=100uA
1 2 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
-IB=500uA
12345
-VCE, Collector-to-Emitter Voltage(V)
6
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Emitter Grounded Output Characteristics
20mA
8mA
6mA
4mA
-IB=2mA
12 345
-VCE, Collector-to-Emitter Voltage(V)
6
Emitter Grounded Output Characteristics
6
5 50mA
4 25mA
3
10mA
2 -IB=5mA
1
0
012345
-VCE, Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
1000
VCE=-1V
Current Gain vs Collector Current
1000
VCE=-2V
100 Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
10
1
10 100 1000
-IC, Collector Current(mA)
10000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10 100 1000
-IC, Collector Current(mA)
10000
BTB5240N3
CYStek Product Specification



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