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PNP Transistor. BTB5839M3 Datasheet

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PNP Transistor. BTB5839M3 Datasheet






BTB5839M3 Transistor. Datasheet pdf. Equivalent




BTB5839M3 Transistor. Datasheet pdf. Equivalent





Part

BTB5839M3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB5839M3 Spec. No. : C240M3 Issued Date : 2012. 10.18 Revised Date : 2014.08.06 Page No . : 1/8 Features Low VCE(sat), VCE(sa t)=-0.3 V (max), at IC / IB = -2A / -0. 1A Excellent current gain characterist ics Pb-free lead plating and halogen-f ree package Symbol BTB5839M3 Outline SOT-89 B:Base C:C.
Manufacture

CYStech

Datasheet
Download BTB5839M3 Datasheet


CYStech BTB5839M3

BTB5839M3; ollector E:Emitter BCE Ordering Info rmation Device Package Shipping BTB 5839M3-0-T2-G SOT-89 1000 pcs / Tape & Reel (Pb-free lead plating and halogen -free package) Environment friendly gr ade : S for RoHS compliant products, G for RoHS compliant and green compound p roducts Packing spec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero f or no rank products Pr.


CYStech BTB5839M3

oduct name BTB5839M3 CYStek Product Sp ecification CYStech Electronics Corp. Spec. No. : C240M3 Issued Date : 2012. 10.18 Revised Date : 2014.08.06 Page No . : 2/8 Absolute Maximum Ratings (Ta=2 5C) Parameter Collector-Base Voltag e Collec .


CYStech BTB5839M3

.

Part

BTB5839M3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB5839M3 Spec. No. : C240M3 Issued Date : 2012. 10.18 Revised Date : 2014.08.06 Page No . : 1/8 Features Low VCE(sat), VCE(sa t)=-0.3 V (max), at IC / IB = -2A / -0. 1A Excellent current gain characterist ics Pb-free lead plating and halogen-f ree package Symbol BTB5839M3 Outline SOT-89 B:Base C:C.
Manufacture

CYStech

Datasheet
Download BTB5839M3 Datasheet




 BTB5839M3
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB5839M3
Spec. No. : C240M3
Issued Date : 2012.10.18
Revised Date : 2014.08.06
Page No. : 1/8
Features
Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A
Excellent current gain characteristics
Pb-free lead plating and halogen-free package
Symbol
BTB5839M3
Outline
SOT-89
BBase
CCollector
EEmitter
BCE
Ordering Information
Device
Package
Shipping
BTB5839M3-0-T2-G
SOT-89
1000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7reel
Product rank, zero for no rank products
Product name
BTB5839M3
CYStek Product Specification




 BTB5839M3
CYStech Electronics Corp.
Spec. No. : C240M3
Issued Date : 2012.10.18
Revised Date : 2014.08.06
Page No. : 2/8
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Pd
Tj ; Tstg
Limits
-50
-30
-7
-3
-5 (Note 1)
0.6
2 (Note 2)
-55~+150
Unit
V
V
V
A
A
W
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Note : 1. Single Pulse , Pw=10ms
2. When mounting on a 40 ×40 ×0.7 mm ceramic board.
3. Human body model, 1.5kΩ in series with 100pF
Symbol
Rth,j-c
Rth,j-a
Rth,j-a
Value
30.4
208
62.5
Unit
C/W
C/W
C/W
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
-50
-30
-7
-
-
-
-
-
-
160
180
150
-
-
Typ.
-
-
-
-
-
-0.05
-0.2
0.1
-1
-
-
-
190
33
Max.
-
-
-
-100
-100
-0.2
-0.3
0.15
-1.2
-
390
-
-
-
Unit
V
V
V
nA
nA
V
V
Ω
V
-
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-50V, IE=0
VEB=-7V, IC=0
IC=-400mA, IB=-20mA
IC=-2A, IB=-100mA
IC=-2A, IB=-100mA
IC=-2A, IB=-200mA
VCE=-2V, IC=-100mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-10V, IC=-0.5A, f=100MHz
VCB=-10V, f =1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
BTB5839M3
CYStek Product Specification




 BTB5839M3
CYStech Electronics Corp.
Spec. No. : C240M3
Issued Date : 2012.10.18
Revised Date : 2014.08.06
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
0.3
0.25 1mA
0.2
0.15
0.1
0.05
0
0
500uA
400uA
300uA
200uA
-IB=100uA
1 2 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
-IB=500uA
12345
-VCE, Collector-to-Emitter Voltage(V)
6
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Emitter Grounded Output Characteristics
20mA
8mA
6mA
4mA
-IB=2mA
12 345
-VCE, Collector-to-Emitter Voltage(V)
6
Emitter Grounded Output Characteristics
6
50mA
5
4 25mA
20mA
3 15mA
2 10mA
1 -IB=5mA
0
0123456
-VCE, Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
1000
VCE=-1V
Current Gain vs Collector Current
1000
VCE=-2V
100 Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
10
1
10 100 1000
-IC, Collector Current(mA)
10000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10 100 1000
-IC, Collector Current(mA)
10000
BTB5839M3
CYStek Product Specification



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