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PNP Transistor. BTB589N3 Datasheet

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PNP Transistor. BTB589N3 Datasheet






BTB589N3 Transistor. Datasheet pdf. Equivalent




BTB589N3 Transistor. Datasheet pdf. Equivalent





Part

BTB589N3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Saturation PNP Epitaxial Planar Transistor BTB589 N3 Spec. No. : C314N3 Issued Date : 20 05.04.20 Revised Date :2009.05.08 Page No. : 1/ 6 Description The BTB589N3 is designed with high current gain and lo w saturation voltage with collector cur rent up to 1A continuous. Features • Low VCE(SAT) , VCE(SAT)≤ -0.3V (IC / IB=-1A/-100mA) • Larg.
Manufacture

CYStech

Datasheet
Download BTB589N3 Datasheet


CYStech BTB589N3

BTB589N3; e collector current, IC=-1A • Pb-free package Symbol BTB589N3 Outline SOT-2 3 B:Base C:Collector E:Emitter BTB589N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C314N3 Issued Date : 2005.04.20 Revise d Date :2009.05.08 Page No. : 2/ 6 Abs olute Maximum Ratings (Ta=25°C) Parame ter Collector-Base Voltage Collector-Em itter Voltage Emitter-Base .


CYStech BTB589N3

Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Sym bol VCBO VCEO VEBO IC ICP Pd Thermal R esistance, Junction to Ambient RθJA Junction Temperature Tj Storage Tempe rature Tstg Note: 1.Device mounted on FR-4 PCB .


CYStech BTB589N3

.

Part

BTB589N3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Saturation PNP Epitaxial Planar Transistor BTB589 N3 Spec. No. : C314N3 Issued Date : 20 05.04.20 Revised Date :2009.05.08 Page No. : 1/ 6 Description The BTB589N3 is designed with high current gain and lo w saturation voltage with collector cur rent up to 1A continuous. Features • Low VCE(SAT) , VCE(SAT)≤ -0.3V (IC / IB=-1A/-100mA) • Larg.
Manufacture

CYStech

Datasheet
Download BTB589N3 Datasheet




 BTB589N3
CYStech Electronics Corp.
Low Saturation PNP Epitaxial Planar Transistor
BTB589N3
Spec. No. : C314N3
Issued Date : 2005.04.20
Revised Date :2009.05.08
Page No. : 1/ 6
Description
The BTB589N3 is designed with high current gain and low saturation voltage with collector current up
to 1A continuous.
Features
Low VCE(SAT) , VCE(SAT)-0.3V (IC / IB=-1A/-100mA)
Large collector current, IC=-1A
Pb-free package
Symbol
BTB589N3
Outline
SOT-23
BBase
CCollector
EEmitter
BTB589N3
CYStek Product Specification




 BTB589N3
CYStech Electronics Corp.
Spec. No. : C314N3
Issued Date : 2005.04.20
Revised Date :2009.05.08
Page No. : 2/ 6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Thermal Resistance, Junction to Ambient
RθJA
Junction Temperature
Tj
Storage Temperature
Tstg
Note: 1.Device mounted on FR-4 PCB with minimum pad
2.Device mounted on FR-4 PCB with area of 4.5”×5, mounting pad 0.02 in² of 2 oz copper
Limits
-50
-32
-5
-1
-2
310 (Note 1)
500 (Note 2)
403 (Note 1)
250 (Note 2)
-55~+150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
fT
Cob
Min.
-40
-32
-5
-
-
-
-
-
-
-
180
100
80
30
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
200
12
Max.
-
-
-
-100
-100
-0.25
-0.30
-0.65
-1.2
-1.1
420
-
-
-
-
25
Unit
V
V
V
nA
nA
V
V
V
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-30V
VEB=-4V
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-1A, IB=-100mA
VCE=-2V, IC=-1A
VCE=-3V, IC=-100mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-2V, IC=-2A
VCE=-5V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
BTB589N3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
AH
BTB589N3
CYStek Product Specification




 BTB589N3
CYStech Electronics Corp.
Spec. No. : C314N3
Issued Date : 2005.04.20
Revised Date :2009.05.08
Page No. : 3/ 6
Characteristic Curves
Current Gain vs Collector Current
1000
VCE = 2V
10000
Saturation Voltage vs Collector Current
100
VCE = 1V
1000
100
VCE(SAT) @ IC=100IB
10
1
10000
10 100 1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
10
1
1000
VCE(SAT) @ IC=10IB
10 100 1000
Collector Current---IC(mA)
On Voltage vs Collector Current
10000
1000
VBE(SAT) @ IC=10IB
100
1
500
400
300
200
100
0
0
10 100 1000
Collector Current---IC(mA)
Power Derating Curves
10000
See Note 2 on page 1
See Note 1 on page 1
50 100 150
Ambient Temperature---TA(℃)
200
VBE(ON) @ VCE=1V
100
1
10 100 1000
Collector Current---IC(mA)
10000
BTB589N3
CYStek Product Specification



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