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PNP Transistor. BTB772AJ3 Datasheet

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PNP Transistor. BTB772AJ3 Datasheet






BTB772AJ3 Transistor. Datasheet pdf. Equivalent




BTB772AJ3 Transistor. Datasheet pdf. Equivalent





Part

BTB772AJ3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB772AJ3 Spec. No. : C240M3 Issued Date : 2013. 02.19 Revised Date : Page No. : 1/8 Fe atures • Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A • E xcellent current gain characteristics Pb-free lead plating and halogen-fre e package Symbol BTB772AJ3 Outline T O-252AA B:Base C:Collec.
Manufacture

CYStech

Datasheet
Download BTB772AJ3 Datasheet


CYStech BTB772AJ3

BTB772AJ3; tor E:Emitter BCE Absolute Maximum R atings (Ta=25°C) Parameter Collector-B ase Voltage Collector-Emitter Voltage E mitter-Base Voltage Collector Current ( DC) Collector Current (Pulse) Power Dis sipation Operating Junction and Storage Temperature Range Symbol VCBO VCEO VE BO IC ICP Pd(TA=25℃) Pd(TC=25℃) Tj ; Tstg Limits -50 -30 -7 -3 -5 (Note 1 ) 1 15 -55~+150 Unit V V.


CYStech BTB772AJ3

V A A W W °C BTB772AJ3 CYStek Produc t Specification CYStech Electronics Co rp. Spec. No. : C240M3 Issued Date : 2 013.02.19 Revised Date : Page No. : 2/8 Thermal Data Parameter Thermal Resist ance, Junction-to-case, max Thermal Res istance, .


CYStech BTB772AJ3

.

Part

BTB772AJ3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB772AJ3 Spec. No. : C240M3 Issued Date : 2013. 02.19 Revised Date : Page No. : 1/8 Fe atures • Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A • E xcellent current gain characteristics Pb-free lead plating and halogen-fre e package Symbol BTB772AJ3 Outline T O-252AA B:Base C:Collec.
Manufacture

CYStech

Datasheet
Download BTB772AJ3 Datasheet




 BTB772AJ3
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB772AJ3
Spec. No. : C240M3
Issued Date : 2013.02.19
Revised Date :
Page No. : 1/8
Features
Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A
Excellent current gain characteristics
Pb-free lead plating and halogen-free package
Symbol
BTB772AJ3
Outline
TO-252AA
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd(TA=25)
Pd(TC=25)
Tj ; Tstg
Limits
-50
-30
-7
-3
-5 (Note 1)
1
15
-55~+150
Unit
V
V
V
A
A
W
W
°C
BTB772AJ3
CYStek Product Specification




 BTB772AJ3
CYStech Electronics Corp.
Spec. No. : C240M3
Issued Date : 2013.02.19
Revised Date :
Page No. : 2/8
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : 1. Single Pulse , Pw=10ms
Symbol
Rth,j-c
Rth,j-a
Value
8.33
125
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
-50
-30
-7
-
-
-
-
-
-
160
180
150
-
-
Typ.
-
-
-
-
-
-0.05
-0.2
0.1
-1
-
-
-
190
33
Max.
-
-
-
-100
-100
-0.2
-0.3
0.15
-1.2
-
390
-
-
-
Unit
V
V
V
nA
nA
V
V
Ω
V
-
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-50V, IE=0
VEB=-7V, IC=0
IC=-400mA, IB=-20mA
IC=-2A, IB=-100mA
IC=-2A, IB=-100mA
IC=-2A, IB=-200mA
VCE=-2V, IC=-100mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-10V, IC=-0.5A, f=100MHz
VCB=-10V, f =1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
BTB772AJ3-0-T3-G
Package
TO-252AA
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
BTB772AJ3
CYStek Product Specification




 BTB772AJ3
CYStech Electronics Corp.
Spec. No. : C240M3
Issued Date : 2013.02.19
Revised Date :
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
0.3
0.25 1mA
0.2
0.15
0.1
0.05
0
0
500uA
400uA
300uA
200uA
-IB=100uA
1 2 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
-IB=500uA
12345
-VCE, Collector-to-Emitter Voltage(V)
6
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Emitter Grounded Output Characteristics
20mA
8mA
6mA
4mA
-IB=2mA
12 345
-VCE, Collector-to-Emitter Voltage(V)
6
Emitter Grounded Output Characteristics
6
50mA
5
4 25mA
20mA
3 15mA
2 10mA
1 -IB=5mA
0
012345
-VCE, Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
1000
VCE=-1V
Current Gain vs Collector Current
1000
VCE=-2V
100 Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
10
1
10 100 1000
-IC, Collector Current(mA)
10000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10 100 1000
-IC, Collector Current(mA)
10000
BTB772AJ3
CYStek Product Specification



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