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PNP Transistor. BTB772J3 Datasheet

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PNP Transistor. BTB772J3 Datasheet






BTB772J3 Transistor. Datasheet pdf. Equivalent




BTB772J3 Transistor. Datasheet pdf. Equivalent





Part

BTB772J3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Spec. No. : C 809J3 Issued Date : 2008.06.12 Revised Date: 2010.12.08 Page:1/7 Low Vcesat P NP Epitaxial Planar Transistor BTB772J3 BVCEO IC RCE(SAT) -30V -3A 225mΩ ty p. Features • Low VCE(sat) • Excel lent current gain characteristics • C omplementary to BTD882J3 • RoHS compl iant package Symbol BTB772J3 Outline TO-252AB TO-252AA B:Base .
Manufacture

CYStech

Datasheet
Download BTB772J3 Datasheet


CYStech BTB772J3

BTB772J3; C:Collector E:Emitter BCE B CE Ab solute Maximum Ratings (Ta=25°C) Para meter Collector-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage Co llector Current Power Dissipation Junct ion Temperature Storage Temperature Not e : *1. Single Pulse Pw≦350μs,Duty 2%. Symbol VCBO VCEO VEBO IC(DC) IC(p ulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg BTB772J3 Limit -40 -30 -6 -3 .


CYStech BTB772J3

-5 1.25 10 150 -55~+150 *1 Unit V V V A A W °C °C CYStek Product Specifica tion CYStech Electronics Corp. Spec. No. : C809J3 Issued Date : 2008.06.12 R evised Date: 2010.12.08 Page:2/7 Chara cteristics (Ta=25°C) Symbol BVCBO BVC .


CYStech BTB772J3

.

Part

BTB772J3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Spec. No. : C 809J3 Issued Date : 2008.06.12 Revised Date: 2010.12.08 Page:1/7 Low Vcesat P NP Epitaxial Planar Transistor BTB772J3 BVCEO IC RCE(SAT) -30V -3A 225mΩ ty p. Features • Low VCE(sat) • Excel lent current gain characteristics • C omplementary to BTD882J3 • RoHS compl iant package Symbol BTB772J3 Outline TO-252AB TO-252AA B:Base .
Manufacture

CYStech

Datasheet
Download BTB772J3 Datasheet




 BTB772J3
CYStech Electronics Corp.
Spec. No. : C809J3
Issued Date : 2008.06.12
Revised Date: 2010.12.08
Page:1/7
Low Vcesat PNP Epitaxial Planar Transistor
BTB772J3
BVCEO
IC
RCE(SAT)
-30V
-3A
225mΩ typ.
Features
Low VCE(sat)
Excellent current gain characteristics
Complementary to BTD882J3
RoHS compliant package
Symbol
BTB772J3
Outline
TO-252AB
TO-252AA
BBase
CCollector
EEmitter
BCE
B CE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw350μs,Duty2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
Pd(Ta=25)
Pd(Tc=25)
Tj
Tstg
BTB772J3
Limit
-40
-30
-6
-3
-5
1.25
10
150
-55~+150
*1
Unit
V
V
V
A
A
W
°C
°C
CYStek Product Specification




 BTB772J3
CYStech Electronics Corp.
Spec. No. : C809J3
Issued Date : 2008.06.12
Revised Date: 2010.12.08
Page:2/7
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Cob
Min.
-40
-30
-6
-
-
-
-
120
180
-
-
Typ.
-
-
-
-
-
-0.45
-1
-
-
80
55
Classification Of hFE 2
Rank
Range
P
180~390
Max.
-
-
-
-1
-1
-0.6
-1.5
-
500
-
-
Unit
V
V
V
μA
μA
V
V
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-40V, IE=0
VEB=-6V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-500mA
VCE=-5V, IE=-0.1A, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
E
250~500
Ordering Information
Device
BTB772J3
Package
TO-252
(RoHS compliant package)
Shipping
2500 pcs / Tape & Reel
Marking
B772
Recommended Storage Condition:
Temperature : 10~ 35 °C
Humidity : 30~ 60% RH
Recommended soldering footprint
BTB772J3
CYStek Product Specification




 BTB772J3
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C809J3
Issued Date : 2008.06.12
Revised Date: 2010.12.08
Page:3/7
Current Gain vs Collector Current
1000
VCE=5V
100 VCE=2V
VCE=1V
10
1
10 100 1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
10000
Saturation Voltage vs Collector Current
1000
100
VCESAT@IC=50IB
10
1
1
10000
VCESAT=20IB
VCESAT=10IB
10 100 1000
Collector Current---IC(mA)
On Voltage vs Collector Current
10000
1000
VBESAT@IC=10IB
1000
VBEON@VCE=2V
100
1
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
BTB772J3
10 100 1000
Collector Current---IC(mA)
Power Derating Curve
10000
50 100 150
Ambient Temperature---TA(℃)
200
100
1
12
10
8
6
4
2
0
0
10 100 1000
Collector Current---IC(mA)
Power Derating Curve
10000
50 100 150
Case Temperature---TC(℃)
200
CYStek Product Specification



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