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PNP Transistor. BTB772ST3 Datasheet

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PNP Transistor. BTB772ST3 Datasheet






BTB772ST3 Transistor. Datasheet pdf. Equivalent




BTB772ST3 Transistor. Datasheet pdf. Equivalent





Part

BTB772ST3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Spec. No. : C809T3 Issued Date : 2008. 08.01 Revised Date: 2018.07.02 Page:1/5 Features Low VCE(sat), typically -0. 45 V at IC / IB = -2A / -0.2A Excellen t current gain characteristics Pb-free lead plating and halogen-free package Symbol BTB772ST3 Outline TO-126 B: Base C:Collector E:E.
Manufacture

CYStech

Datasheet
Download BTB772ST3 Datasheet


CYStech BTB772ST3

BTB772ST3; mitter ECB Ordering Information Devic e BTB772ST3-P-BL-X BTB772ST3-P-UH-X Pa ckage TO-126 (Pb-free lead plating and halogen-free package) Shipping 200 pcs / bag, 3,000 pcs/box 30,000 pcs/carton 60 pcs/ tube, 40 tubes/box Environmen t friendly grade : S for RoHS compliant products, G for RoHS compliant and gre en compound products Packing spec, BL: bulk, 200 pcs/bag,.


CYStech BTB772ST3

15 bags/box, 10 boxes/carton ; UH : tub e, 60 pcs/tube, 40 tubes/box Product ra nk, zero for no rank products Product n ame BTB772ST3 CYStek Product Specific ation CYStech Electronics Corp. Spec. No. : C809T3 Issued Date : 2008.08.01 Revised Da .


CYStech BTB772ST3

.

Part

BTB772ST3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Spec. No. : C809T3 Issued Date : 2008. 08.01 Revised Date: 2018.07.02 Page:1/5 Features Low VCE(sat), typically -0. 45 V at IC / IB = -2A / -0.2A Excellen t current gain characteristics Pb-free lead plating and halogen-free package Symbol BTB772ST3 Outline TO-126 B: Base C:Collector E:E.
Manufacture

CYStech

Datasheet
Download BTB772ST3 Datasheet




 BTB772ST3
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB772ST3
Spec. No. : C809T3
Issued Date : 2008.08.01
Revised Date: 2018.07.02
Page:1/5
Features
Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A
Excellent current gain characteristics
Pb-free lead plating and halogen-free package
Symbol
BTB772ST3
Outline
TO-126
BBase
CCollector
EEmitter
ECB
Ordering Information
Device
BTB772ST3-P-BL-X
BTB772ST3-P-UH-X
Package
TO-126
(Pb-free lead plating and halogen-free
package)
Shipping
200 pcs / bag, 3,000 pcs/box
30,000 pcs/carton
60 pcs/ tube, 40 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton ; UH : tube, 60 pcs/tube,
40 tubes/box
Product rank, zero for no rank products
Product name
BTB772ST3
CYStek Product Specification




 BTB772ST3
CYStech Electronics Corp.
Spec. No. : C809T3
Issued Date : 2008.08.01
Revised Date: 2018.07.02
Page:2/5
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw300μs, Duty2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
Pd(Ta=25)
Pd(Tc=25)
Tj
Tstg
Limit
-40
-30
-5
-2
-5
1
10
150
-55~+150
*1
Unit
V
V
V
A
A
W
C
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
125
Unit
C/W
C/W
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Cob
Min. Typ.
-40 -
-30 -
-5 -
--
--
- -0.45
- -1
120 -
180 -
- 80
- 55
Classification Of hFE 2
Rank
Range
P
180~390
Max.
-
-
-
-1
-1
-0.6
-1.5
-
390
-
-
Unit
V
V
V
μA
μA
V
V
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-500mA
VCE=-5V, IE=-0.1A, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Recommended Storage Condition:
Temperature : 10~ 35 C
Humidity : 30~ 60% RH
BTB772ST3
CYStek Product Specification




 BTB772ST3
CYStech Electronics Corp.
Spec. No. : C809T3
Issued Date : 2008.08.01
Revised Date: 2018.07.02
Page:3/5
Typical Characteristics
Current Gain vs Collector Current
1000
VCE=5V
100 VCE=2V
10000
Saturation Voltage vs Collector Current
1000
100
VCESAT@IC=50IB
VCE=1V
10
1
10 100 1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
10
1
1
10000
VCESAT=20IB
VCESAT=10IB
10 100 1000
Collector Current---IC(mA)
On Voltage vs Collector Current
10000
1000
VBESAT@IC=10IB
1000
VBEON@VCE=2V
100
1
1.2
1
0.8
0.6
0.4
0.2
0
0
10 100 1000
Collector Current---IC(mA)
Power Derating Curve
10000
50 100 150
Ambient Temperature---TA(℃)
200
BTB772ST3
100
1
12
10
8
6
4
2
0
0
10 100 1000
Collector Current---IC(mA)
Power Derating Curve
10000
50 100 150
Case Temperature---TC(℃)
200
CYStek Product Specification



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