CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB818AG6
Spec. No. : C240G6 Issued Date : 2013.05...
CYStech Electronics Corp.
Low Vcesat
PNP Epitaxial Planar
Transistor
BTB818AG6
Spec. No. : C240G6 Issued Date : 2013.05.03 Revised Date : 2013.08.29 Page No. : 1/9
Features
Low VCE(sat), VCE(sat)=-0.11V (typical), at IC / IB =- 500mA /- 5mA Pb-free lead plating and halogen-free package
Equivalent Circuit
BTB818AG6
Outline
TSOP-6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO -50 V
Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current Peak Base Current
VCEO VEBO
IC ICM IBM
-30 -7 -3 -6 *1 -500
V V A A mA
Power Dissipation
PD
1.2 *2
W
Thermal Resistance, Junction to Ambient
RθJA 104 °C/W
Operating Junction and Storage Temperature Range
Note :1 Single pulse, Pw=10ms
Tj;Tstg
-55~+150
°C
2. When mounted on 25mm×25mm×1.6 mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air condition.
BTB818AG6
CYStek Product Specification
CYStech Electronics Corp.
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