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PNP Transistor. BTB818AG6 Datasheet

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PNP Transistor. BTB818AG6 Datasheet






BTB818AG6 Transistor. Datasheet pdf. Equivalent




BTB818AG6 Transistor. Datasheet pdf. Equivalent





Part

BTB818AG6

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB818AG6 Spec. No. : C240G6 Issued Date : 2013. 05.03 Revised Date : 2013.08.29 Page No . : 1/9 Features • Low VCE(sat), VCE (sat)=-0.11V (typical), at IC / IB =- 5 00mA /- 5mA • Pb-free lead plating an d halogen-free package Equivalent Circ uit BTB818AG6 Outline TSOP-6 Absolute Maximum Ratings (Ta=2.
Manufacture

CYStech

Datasheet
Download BTB818AG6 Datasheet


CYStech BTB818AG6

BTB818AG6; 5°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -50 V Col lector-Emitter Voltage Emitter-Base Vol tage Collector Current(DC) Peak Collect or Current Peak Base Current VCEO VEBO IC ICM IBM -30 -7 -3 -6 *1 -500 V V A A mA Power Dissipation PD 1.2 *2 W Thermal Resistance, Junction to Ambi ent RθJA 104 °C/W Operating Junctio n and Storage Tempera.


CYStech BTB818AG6

ture Range Note :1 Single pulse, Pw=10ms Tj;Tstg -55~+150 °C 2. When mount ed on 25mm×25mm×1.6 mm FR-4 PCB with high coverage of single sided 1 oz copp er, in still air condition. BTB818AG6 CYStek Product Specification CYStech Electronics Corp. .


CYStech BTB818AG6

.

Part

BTB818AG6

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB818AG6 Spec. No. : C240G6 Issued Date : 2013. 05.03 Revised Date : 2013.08.29 Page No . : 1/9 Features • Low VCE(sat), VCE (sat)=-0.11V (typical), at IC / IB =- 5 00mA /- 5mA • Pb-free lead plating an d halogen-free package Equivalent Circ uit BTB818AG6 Outline TSOP-6 Absolute Maximum Ratings (Ta=2.
Manufacture

CYStech

Datasheet
Download BTB818AG6 Datasheet




 BTB818AG6
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB818AG6
Spec. No. : C240G6
Issued Date : 2013.05.03
Revised Date : 2013.08.29
Page No. : 1/9
Features
Low VCE(sat), VCE(sat)=-0.11V (typical), at IC / IB =- 500mA /- 5mA
Pb-free lead plating and halogen-free package
Equivalent Circuit
BTB818AG6
Outline
TSOP-6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO -50 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Peak Collector Current
Peak Base Current
VCEO
VEBO
IC
ICM
IBM
-30
-7
-3
-6 *1
-500
V
V
A
A
mA
Power Dissipation
PD
1.2 *2
W
Thermal Resistance, Junction to Ambient
RθJA 104 °C/W
Operating Junction and Storage Temperature Range
Note :1 Single pulse, Pw=10ms
Tj;Tstg
-55~+150
°C
2. When mounted on 25mm×25mm×1.6 mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air
condition.
BTB818AG6
CYStek Product Specification




 BTB818AG6
CYStech Electronics Corp.
Spec. No. : C240G6
Issued Date : 2013.05.03
Revised Date : 2013.08.29
Page No. : 2/9
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat) 1
*VBE(sat) 2
*VBE(sat) 3
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
Min.
-50
-30
-7
-
-
-
-
-
-
-
-
-
100
100
-
-
Typ.
-
-
-
-
-
-108
-175
-376
-0.75
-0.82
-0.89
-0.73
-
-
150
12
Max.
-
-
-
-100
-100
-150
-300
-500
-1.1
-1.1
-1.2
-1.1
-
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
V
V
V
V
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-50V, IE=0
VEB=-7V, IC=0
IC=-500mA, IB=-5mA
IC=-1.2A, IB=-12mA
IC=-2A, IB=-20mA
IC=-500mA, IB=-5mA
IC=-1.2A, IB=-12mA
IC=-2A, IB=-20mA
VCE=-2V, IC=-500mA
VCE=-1V, IC=-500mA
VCE=-3V, IC=-2.5A
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
BTB818AG6-0-T1-G
Package
TSOP-6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
BTB818AG6
CYStek Product Specification




 BTB818AG6
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C240G6
Issued Date : 2013.05.03
Revised Date : 2013.08.29
Page No. : 3/9
0.3
0.25
0.2
0.15
0.1
0.05
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
-IB=100uA
1 2 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
-IB=500uA
12345
-VCE, Collector-to-Emitter Voltage(V)
6
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Emitter Grounded Output Characteristics
20mA
8mA
6mA
4mA
-IB=2mA
12 345
-VCE, Collector-to-Emitter Voltage(V)
6
Emitter Grounded Output Characteristics
6
50mA
5
4 25mA
20mA
3 15mA
2 10mA
1 -IB=5mA
0
0 12 3 45 6
-VCE, Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
1000
VCE=-1V
Current Gain vs Collector Current
1000
VCE=-2V
100 Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
10
1
10 100 1000
-IC, Collector Current(mA)
10000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1
10 100 1000
-IC, Collector Current(mA)
10000
BTB818AG6
CYStek Product Specification



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