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PNP Transistor. BTB857T3 Datasheet

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PNP Transistor. BTB857T3 Datasheet






BTB857T3 Transistor. Datasheet pdf. Equivalent




BTB857T3 Transistor. Datasheet pdf. Equivalent





Part

BTB857T3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB857T3 Spec. No. : C811T3 Issued Date : 2017.0 1.18 Revised Date : 2018.07.02 Page No. : 1/5 Features Low VCE(sat), VCE(sat )=-0.15V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain charac teristics Wide SOA RoHS compliant pac kage Symbol BTB857T3 Outline TO-126 B:Base C:Collecto.
Manufacture

CYStech

Datasheet
Download BTB857T3 Datasheet


CYStech BTB857T3

BTB857T3; r E:Emitter E CB Ordering Informatio n Device BTB857T3-0-BL-G BTB857T3-0-UH -G Package TO-126 (Pb-free lead platin g and halogen-free package) Shipping 2 00 pcs / bag, 3,000 pcs/box 30,000 pcs/ carton 60 pcs/ tube, 40 tubes/box Envi ronment friendly grade : S for RoHS com pliant products, G for RoHS compliant a nd green compound products Packing spec , BL: bulk, 200 pcs/.


CYStech BTB857T3

bag, 15 bags/box, 10 boxes/carton ; UH : tube, 60 pcs/tube, 40 tubes/box Produc t rank, zero for no rank products Produ ct name BTB857T3 CYStek Product Speci fication CYStech Electronics Corp. Sp ec. No. : C811T3 Issued Date : 2017.01. 18 Revi .


CYStech BTB857T3

.

Part

BTB857T3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB857T3 Spec. No. : C811T3 Issued Date : 2017.0 1.18 Revised Date : 2018.07.02 Page No. : 1/5 Features Low VCE(sat), VCE(sat )=-0.15V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain charac teristics Wide SOA RoHS compliant pac kage Symbol BTB857T3 Outline TO-126 B:Base C:Collecto.
Manufacture

CYStech

Datasheet
Download BTB857T3 Datasheet




 BTB857T3
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB857T3
Spec. No. : C811T3
Issued Date : 2017.01.18
Revised Date : 2018.07.02
Page No. : 1/5
Features
Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB = -2A / -0.2A
Excellent DC current gain characteristics
Wide SOA
RoHS compliant package
Symbol
BTB857T3
Outline
TO-126
BBase
CCollector
EEmitter
E CB
Ordering Information
Device
BTB857T3-0-BL-G
BTB857T3-0-UH-G
Package
TO-126
(Pb-free lead plating and halogen-free
package)
Shipping
200 pcs / bag, 3,000 pcs/box
30,000 pcs/carton
60 pcs/ tube, 40 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton ; UH : tube, 60 pcs/tube,
40 tubes/box
Product rank, zero for no rank products
Product name
BTB857T3
CYStek Product Specification




 BTB857T3
CYStech Electronics Corp.
Spec. No. : C811T3
Issued Date : 2017.01.18
Revised Date : 2018.07.02
Page No. : 2/5
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Continuous
Pulse
TA=25
TC=25
Operating Junction Temperature Range
Storage Temperature Range
Note : *1. Single Pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
Limits
-100
-100
-6
-5
-8 *1
1.5
20
-55~+150
-55~+150
Unit
V
V
V
A
W
C
C
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Min.
-100
-100
-6
-
-
-
-
-
-
-
180
120
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
15
Max.
-
-
-
-50
-10
-50
-0.2
-0.3
-0.4
-1.2
390
-
-
Unit
V
V
V
nA
μA
nA
V
V
V
V
-
-
MHz
Test Conditions
IC=-50μA, IE=0
IC=-10mA, IB=0
IE=-50μA, IC=0
VCB=-100V, IE=0
VCE=-100V, IB=0
VEB=-6V, IC=0
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-3A, IB=-300mA
IC=-2A, IB=-200mA
VCE=-3V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
BTB857T3
CYStek Product Specification




 BTB857T3
CYStech Electronics Corp.
Spec. No. : C811T3
Issued Date : 2017.01.18
Revised Date : 2018.07.02
Page No. : 3/5
Typical Characteristics
Current Gain vs Collector Current
1000
100 VCE=5V
10000
1000
100
Saturation Voltage vs Collector Current
VCE(SAT)
IC=20IB
IC=50IB
10
1
VCE=2V
VCE=1V
10 100 1000
Collector Current---IC(mA)
10000
10
1
1
IC=10IB
10 100 1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VBE(SAT) @ IC=10IB
10000
On Vottage vs Collector Current
VBE(ON)@VCE=5V
1000 1000
100
1
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
10 100 1000
Collector Current---IC(mA)
Power Derating Curve
10000
50 100 150
Ambient Temperature---TA(℃)
200
100
1
25
20
15
10
5
0
0
10 100 1000
Collector Current---IC(mA)
Power Derating Curve
10000
50 100 150
Case Temperature---TC(℃)
200
BTB857T3
CYStek Product Specification



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