Dual N-Channel 20V Power MOSFET
Dual N-Channel 20V Power MOSFET
Features:
• Super high dense cell design for low RDS(ON) • Rugged and reliable • Surface...
Description
Dual N-Channel 20V Power MOSFET
Features:
Super high dense cell design for low RDS(ON) Rugged and reliable Surface Mount Package
Application
DC-DC converters Power management in portable and
Battery-powered products
LTC8205A
BVDSS=20V , RDS(ON)=24.5mΩ ID=6A
Absolute Maximum Ratings (TA=25℃Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (1), (2)
Power Dissipation (1)
TA=25℃ TA=100℃
VDSS VGS ID IDM
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
20 ±10
6 20 0.83
0.3 -55 to150
Thermal Characteristics
Symbol
Characteris
RθJA* Junction-to-Ambient
:Notes
(1). Surface Mounted on 1 in2 pad area, t ≤ 10 sec
(2). Pulse width ≤ 300 µs, duty cycle ≤ 2 %
Typ Max.
-- 150
Unit
V V A A
W
℃
Units
℃/ W
Rev.2, Feb. 2014
Dual N-Channel 20V Power MOSFET
Electrical Characteristics (TA =25℃Unless Otherwise Specified)
Symbol
Parameter
Test...
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