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Planar Transistor. BTC2880M3G Datasheet

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Planar Transistor. BTC2880M3G Datasheet






BTC2880M3G Transistor. Datasheet pdf. Equivalent




BTC2880M3G Transistor. Datasheet pdf. Equivalent





Part

BTC2880M3G

Description

General Purpose NPN Epitaxial Planar Transistor



Feature


CYStech Electronics Corp. General Purpos e NPN Epitaxial Planar Transistor BTC28 80M3G Spec. No. : C319M3G Issued Date : 2007.05.31 Revised Date : 2008.12.22 Page No. : 1/5 Features • High break down voltage, BVCEO≥ 120V • Large c ontinuous collector current capability • Low collector saturation voltage RoHS compliant and Halogen-free packa ge Symbol BTC2880M3G Outlin.
Manufacture

CYStech

Datasheet
Download BTC2880M3G Datasheet


CYStech BTC2880M3G

BTC2880M3G; e SOT-89 B:Base C:Collector E:Em itter BCE Absolute Maximum Ratings (T a=25°C) Parameter Collector-Base Volta ge Collector-Emitter Voltage Emitter-Ba se Voltage Collector Current Base Curre nt Symbol VCBO VCEO VEBO IC IB Power Dissipation Pd Junction Temperature Tj Storage Temperature Tstg Note : 1 . When mounted on FR-4 PCB with area me asuring 10×10×1 mm 2 . W.


CYStech BTC2880M3G

hen mounted on ceramic with area measuri ng 40×40×1 mm BTC2880M3G Limits 180 120 7 1 2 0.6 1 (Note 1) 2 (Note 2) 15 0 -55~+150 Unit V V V A A W W W °C ° C CYStek Product Specification CYStec h Electronics Corp. Spec. No. : C319M3 G Issu .


CYStech BTC2880M3G

.

Part

BTC2880M3G

Description

General Purpose NPN Epitaxial Planar Transistor



Feature


CYStech Electronics Corp. General Purpos e NPN Epitaxial Planar Transistor BTC28 80M3G Spec. No. : C319M3G Issued Date : 2007.05.31 Revised Date : 2008.12.22 Page No. : 1/5 Features • High break down voltage, BVCEO≥ 120V • Large c ontinuous collector current capability • Low collector saturation voltage RoHS compliant and Halogen-free packa ge Symbol BTC2880M3G Outlin.
Manufacture

CYStech

Datasheet
Download BTC2880M3G Datasheet




 BTC2880M3G
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC2880M3G
Spec. No. : C319M3G
Issued Date : 2007.05.31
Revised Date : 2008.12.22
Page No. : 1/5
Features
High breakdown voltage, BVCEO120V
Large continuous collector current capability
Low collector saturation voltage
RoHS compliant and Halogen-free package
Symbol
BTC2880M3G
Outline
SOT-89
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
IB
Power Dissipation
Pd
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
BTC2880M3G
Limits
180
120
7
1
2
0.6
1 (Note 1)
2 (Note 2)
150
-55~+150
Unit
V
V
V
A
A
W
W
W
°C
°C
CYStek Product Specification




 BTC2880M3G
CYStech Electronics Corp.
Spec. No. : C319M3G
Issued Date : 2007.05.31
Revised Date : 2008.12.22
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
180
120
7
-
-
-
-
-
-
100
100
80
50
-
Typ.
-
-
-
-
-
0.1
0.2
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.2
0.5
1
0.9
-
270
-
-
20
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=180V
VEB=6V
IC=500mA, IB=50mA
IC=1A, IB=50mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=50mA
VCE=5V, IC=100mA
VCE=5V, IC=800mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Classification Of hFE 2
Rank
Range
P
100~200
Q
120~270
Ordering Information
Device
BTC2880M3G
Package
Shipping
Marking
SOT-89
(RoHS Compliant and Halogen-free package)
1000 pcs / Tape & Reel
CB
BTC2880M3G
CYStek Product Specification




 BTC2880M3G
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C319M3G
Issued Date : 2007.05.31
Revised Date : 2008.12.22
Page No. : 3/5
Current Gain vs Collector Current
1000
HFE
VCE=5V
Saturation Voltage vs Collector Current
1000
VCESAT
100
10
1
VCE=2V
VCE=1V
10 100 1000
Collector Current ---IC(mA)
10000
100
10
1
IC=20IB
IC=10IB
10 100 1000
Collector Current ---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VBESAT@IC=10IB
10000
On Voltage vs Collector Current
VBEON@VCE=5V
1000 1000
100
1
2.5
2
1.5
1
0.5
0
0
BTC2880M3G
10 100 1000
Collector Current--- IC(mA)
Power Derating Curves
10000
See note 2 on page 1
See note 1 on page 1
50 100 150
Ambient Temperature---TA(℃)
200
100
1
10 100 1000
Collector Current--- IC(mA)
10000
CYStek Product Specification



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