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Planar Transistor. BTC2881E3 Datasheet

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Planar Transistor. BTC2881E3 Datasheet






BTC2881E3 Transistor. Datasheet pdf. Equivalent




BTC2881E3 Transistor. Datasheet pdf. Equivalent





Part

BTC2881E3

Description

Silicon NPN Epitaxial Planar Transistor



Feature


CYStech Electronics Corp. Silicon NPN E pitaxial Planar Transistor BTC2881E3 B VCEO IC RCESAT(MAX) Spec. No. : C316E3 Issued Date : 2010.01.22 Revised Date : 2010.09.28 Page No. : 1/5 200V 1A 0.8 6Ω Description • High breakdown vol tage, BVCEO≥ 200V • Large continuou s collector current capability • Low collector saturation voltage • RoHS c ompliant package Symbol BTC2.
Manufacture

CYStech

Datasheet
Download BTC2881E3 Datasheet


CYStech BTC2881E3

BTC2881E3; 881E3 Outline TO-220 B:Base C:Col lector E:Emitter BCE Absolute Maxim um Ratings (Ta=25°C) Parameter Collect or-Base Voltage Collector-Emitter Volta ge Emitter-Base Voltage Collector Curre nt Base Current Power Dissipation @TA=2 5℃ Power Dissipation @TC=25℃ Operat ing Junction Temperature and Storage Te mperature Range Symbol VCBO VCEO VEBO IC IB PD Tj ; Tstg Limits 30.


CYStech BTC2881E3

0 200 6 1 0.2 2 20 -55~+150 Unit V V V A A W W °C BTC2881E3 CYStek Product Specification CYStech Electronics Corp . Spec. No. : C316E3 Issued Date : 201 0.01.22 Revised Date : 2010.09.28 Page No. : 2/5 Thermal Data Parameter Therm al .


CYStech BTC2881E3

.

Part

BTC2881E3

Description

Silicon NPN Epitaxial Planar Transistor



Feature


CYStech Electronics Corp. Silicon NPN E pitaxial Planar Transistor BTC2881E3 B VCEO IC RCESAT(MAX) Spec. No. : C316E3 Issued Date : 2010.01.22 Revised Date : 2010.09.28 Page No. : 1/5 200V 1A 0.8 6Ω Description • High breakdown vol tage, BVCEO≥ 200V • Large continuou s collector current capability • Low collector saturation voltage • RoHS c ompliant package Symbol BTC2.
Manufacture

CYStech

Datasheet
Download BTC2881E3 Datasheet




 BTC2881E3
CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTC2881E3
BVCEO
IC
RCESAT(MAX)
Spec. No. : C316E3
Issued Date : 2010.01.22
Revised Date : 2010.09.28
Page No. : 1/5
200V
1A
0.86Ω
Description
High breakdown voltage, BVCEO200V
Large continuous collector current capability
Low collector saturation voltage
RoHS compliant package
Symbol
BTC2881E3
Outline
TO-220
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @TA=25
Power Dissipation @TC=25
Operating Junction Temperature and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
Tj ; Tstg
Limits
300
200
6
1
0.2
2
20
-55~+150
Unit
V
V
V
A
A
W
W
°C
BTC2881E3
CYStek Product Specification




 BTC2881E3
CYStech Electronics Corp.
Spec. No. : C316E3
Issued Date : 2010.01.22
Revised Date : 2010.09.28
Page No. : 2/5
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
6.25
62.5
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
300
200
6
-
-
-
-
-
-
140
160
30
-
-
Typ.
-
-
-
-
-
0.2
-
-
-
-
-
-
120
-
Max.
-
-
-
100
100
0.4
0.6
1
1
-
320
-
-
30
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=10μA
IC=10mA
IE=10μA
VCB=300V
VEB=6V
IC=500mA, IB=50mA
IC=700mA, IB=35mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=50mA
VCE=5V, IC=100mA
VCE=5V, IC=700mA
VCE=5V, IC=100mA
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 300µs, Duty Cycle2%
Ordering Information
Device
BTC2881E3
Package
TO-220
(RoHS compliant package)
Shipping
50 pcs / tube , 40 tubes/box
BTC2881E3
CYStek Product Specification




 BTC2881E3
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C316E3
Issued Date : 2010.01.22
Revised Date : 2010.09.28
Page No. : 3/5
Current Gain vs Collector Current
1000
100
10
1
VCE=5V
VCE=2V
10 100
Collector Current---IC(mA)
1000
10000
1000
Saturation Voltage vs Collector Current
VCESAT
100
10
1
IC=20IB
IC=10IB
10 100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
1000
On Voltage vs Collector Current
1000
VBESAT@IC=10IB
VBEON@VCE=5V
100
1
2.5
2
1.5
1
0.5
0
0
10 100
Collector Current---IC(mA)
Power Derating Curve
1000
50 100 150
Ambient Temperature---TA(℃)
200
BTC2881E3
100
1
25
20
15
10
5
0
0
10 100
Collector Current---IC(mA)
Power Derating Curve
1000
50 100 150
CaseTemperature---TC(℃)
200
CYStek Product Specification



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