CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTC2881E3
BVCEO IC RCESAT(MAX)
Spec. No. : C316E3 I...
CYStech Electronics Corp.
Silicon
NPN Epitaxial Planar
Transistor
BTC2881E3
BVCEO IC RCESAT(MAX)
Spec. No. : C316E3 Issued Date : 2010.01.22 Revised Date : 2010.09.28 Page No. : 1/5
200V 1A 0.86Ω
Description
High breakdown voltage, BVCEO≥ 200V Large continuous collector current capability Low collector saturation voltage RoHS compliant package
Symbol
BTC2881E3
Outline
TO-220
B:Base C:Collector E:Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Operating Junction Temperature and Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC IB
PD
Tj ; Tstg
Limits
300 200 6 1 0.2 2 20 -55~+150
Unit
V V V A A W W °C
BTC2881E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C316E3 Issued Date : 2010.01.22 Revised Date : 2010.09.28 Page No. : 2/5
Thermal Data
Parameter Thermal ...