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Planar Transistor. BTC2881FP Datasheet

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Planar Transistor. BTC2881FP Datasheet






BTC2881FP Transistor. Datasheet pdf. Equivalent




BTC2881FP Transistor. Datasheet pdf. Equivalent





Part

BTC2881FP

Description

Silicon NPN Epitaxial Planar Transistor



Feature


CYStech Electronics Corp. Silicon NPN E pitaxial Planar Transistor BTC2881FP B VCEO IC RCESAT(MAX) Spec. No. : C316FP Issued Date : 2010.09.23 Revised Date : 2010.09.28 Page No. : 1/5 200V 1A 0.8 6Ω Description • High breakdown vol tage, BVCEO≥ 200V • Large continuou s collector current capability • Low collector saturation voltage • RoHS c ompliant package Symbol BTC2.
Manufacture

CYStech

Datasheet
Download BTC2881FP Datasheet


CYStech BTC2881FP

BTC2881FP; 881FP Outline TO-220FP B:Base C:Co llector E:Emitter BCE Absolute Maxi mum Ratings (Ta=25°C) Parameter Collec tor-Base Voltage Collector-Emitter Volt age Emitter-Base Voltage Collector Curr ent Base Current Power Dissipation @TA= 25℃ Power Dissipation @TC=25℃ Opera ting Junction Temperature and Storage T emperature Range Symbol VCBO VCEO VEBO IC IB PD Tj ; Tstg Limits 3.


CYStech BTC2881FP

00 200 6 1 0.2 2 15 -55~+150 Unit V V V A A W W °C BTC2881FP CYStek Product Specification CYStech Electronics Cor p. Spec. No. : C316FP Issued Date : 20 10.09.23 Revised Date : 2010.09.28 Page No. : 2/5 Thermal Data Parameter Ther mal .


CYStech BTC2881FP

.

Part

BTC2881FP

Description

Silicon NPN Epitaxial Planar Transistor



Feature


CYStech Electronics Corp. Silicon NPN E pitaxial Planar Transistor BTC2881FP B VCEO IC RCESAT(MAX) Spec. No. : C316FP Issued Date : 2010.09.23 Revised Date : 2010.09.28 Page No. : 1/5 200V 1A 0.8 6Ω Description • High breakdown vol tage, BVCEO≥ 200V • Large continuou s collector current capability • Low collector saturation voltage • RoHS c ompliant package Symbol BTC2.
Manufacture

CYStech

Datasheet
Download BTC2881FP Datasheet




 BTC2881FP
CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTC2881FP
BVCEO
IC
RCESAT(MAX)
Spec. No. : C316FP
Issued Date : 2010.09.23
Revised Date : 2010.09.28
Page No. : 1/5
200V
1A
0.86Ω
Description
High breakdown voltage, BVCEO200V
Large continuous collector current capability
Low collector saturation voltage
RoHS compliant package
Symbol
BTC2881FP
Outline
TO-220FP
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @TA=25
Power Dissipation @TC=25
Operating Junction Temperature and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
Tj ; Tstg
Limits
300
200
6
1
0.2
2
15
-55~+150
Unit
V
V
V
A
A
W
W
°C
BTC2881FP
CYStek Product Specification




 BTC2881FP
CYStech Electronics Corp.
Spec. No. : C316FP
Issued Date : 2010.09.23
Revised Date : 2010.09.28
Page No. : 2/5
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
8.33
62.5
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
300
200
6
-
-
-
-
-
-
140
160
30
-
-
Typ.
-
-
-
-
-
0.2
-
-
-
-
-
-
120
-
Max.
-
-
-
100
100
0.4
0.6
1
1
-
320
-
-
30
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=10μA
IC=10mA
IE=10μA
VCB=300V
VEB=6V
IC=500mA, IB=50mA
IC=700mA, IB=35mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=50mA
VCE=5V, IC=100mA
VCE=5V, IC=700mA
VCE=5V, IC=100mA
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 300µs, Duty Cycle2%
Ordering Information
Device
BTC2881FP
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs / tube , 40 tubes/box
BTC2881FP
CYStek Product Specification




 BTC2881FP
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C316FP
Issued Date : 2010.09.23
Revised Date : 2010.09.28
Page No. : 3/5
Current Gain vs Collector Current
1000
100
10
1
VCE=5V
VCE=2V
10 100
Collector Current---IC(mA)
1000
10000
1000
Saturation Voltage vs Collector Current
VCESAT
100
10
1
IC=20IB
IC=10IB
10 100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
1000
On Voltage vs Collector Current
1000
VBESAT@IC=10IB
VBEON@VCE=5V
100
1
2.5
2
1.5
1
0.5
0
0
10 100
Collector Current---IC(mA)
Power Derating Curve
1000
50 100 150
Ambient Temperature---TA(℃)
200
100
1
16
14
12
10
8
6
4
2
0
0
BTC2881FP
10 100
Collector Current---IC(mA)
Power Derating Curve
1000
50 100 150
Case Temperature---TC(℃)
200
CYStek Product Specification



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