BTC2881FP

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTC2881FP BVCEO IC RCESAT(MAX) Spec. No. : C316FP Issued Date : 2010.09.23 Revised Date : 2010.09.28 Page No. : 1/5 200V 1A 0.86Ω Description High breakdown voltage, BVCEO≥ 200V Large continuous collector current capability Low collector saturation voltage RoHS compliant package Symbol BTC2881FP Outline TO-220FP B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Operating Junction Temperature and Storage Temperature Range Symbol VCBO VCEO VEBO IC IB PD Tj ; Tstg Limits 300 200 6 1 0.2 2 15 -55~+150 Unit V V V A A W W °C BTC2881FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C316FP Issued Date : 2010.09.23 Revised Date : 2010.09.28 Page No. : 2/5 Thermal Data Parameter Thermal...