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Planar Transistor. BTC3097J3 Datasheet

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Planar Transistor. BTC3097J3 Datasheet






BTC3097J3 Transistor. Datasheet pdf. Equivalent




BTC3097J3 Transistor. Datasheet pdf. Equivalent





Part

BTC3097J3

Description

High Voltage NPN Triple Diffused Planar Transistor



Feature


CYStech Electronics Corp. High Voltage N PN Triple Diffused Planar Transistor BT C3097J3 Spec. No. : C663J3 Issued Date : 2015.09.14 Revised Date : Page No. : 1/7 Features • High voltage, BVCBO= 1600V min., BVCEO=800V min. • Pb-free lead plating package Symbol BTC3097J3 Outline TO-252(DPAK) B:Base C:C ollector E:Emitter B CE Ordering In formation Device BTC3097J3-.
Manufacture

CYStech

Datasheet
Download BTC3097J3 Datasheet


CYStech BTC3097J3

BTC3097J3; 0-T3-G Package TO-252 (Pb-free lead pla ting and halogen-free package) Shippin g 2500 pcs / Tape & Reel Environment f riendly grade : S for RoHS compliant pr oducts, G for RoHS compliant and green compound products Packing spec, T3:2500 pcs/tape & reel, 13” reel Product r ank, zero for no rank products Product name BTC3097J3 CYStek Product Specifi cation CYStech Elec.


CYStech BTC3097J3

tronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Vol tage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Base Cur rent Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Operating Junctio n and Storage .


CYStech BTC3097J3

.

Part

BTC3097J3

Description

High Voltage NPN Triple Diffused Planar Transistor



Feature


CYStech Electronics Corp. High Voltage N PN Triple Diffused Planar Transistor BT C3097J3 Spec. No. : C663J3 Issued Date : 2015.09.14 Revised Date : Page No. : 1/7 Features • High voltage, BVCBO= 1600V min., BVCEO=800V min. • Pb-free lead plating package Symbol BTC3097J3 Outline TO-252(DPAK) B:Base C:C ollector E:Emitter B CE Ordering In formation Device BTC3097J3-.
Manufacture

CYStech

Datasheet
Download BTC3097J3 Datasheet




 BTC3097J3
CYStech Electronics Corp.
High Voltage NPN Triple Diffused Planar Transistor
BTC3097J3
Spec. No. : C663J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 1/7
Features
High voltage, BVCBO=1600V min., BVCEO=800V min.
Pb-free lead plating package
Symbol
BTC3097J3
Outline
TO-252(DPAK)
BBase
CCollector
EEmitter
B CE
Ordering Information
Device
BTC3097J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3:2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTC3097J3
CYStek Product Specification




 BTC3097J3
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @TA=25
Power Dissipation @TC=25
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw300μs,Duty2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
IB
PD
Tj ; Tstg
Spec. No. : C663J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 2/7
Limit
1600
800
6
1
3 *1
0.5
1
40
-55~+150
Unit
V
V
V
A
A
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
3.1
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
Cob
tr
tstg
tf
Min.
1600
800
6
-
-
-
-
-
-
20
22
5
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
Max.
-
-
-
10
10
100
0.3
0.4
1.2
-
45
-
-
0.8
3
0.4
Unit Test Conditions
V IC=100μA, IE=0
V IC=1mA, IB=0
V IE=100μA, IC=0
μA VCB=1600V, IE=0
μA VCB=800V, IB=0
nA VEB=6V, IC=0
V IC=200mA, IB=40mA
V IC=500mA, IB=100mA
V IC=500mA, IB=100mA
- VCE=5V, IC=10mA
- VCE=5V, IC=100mA
- VCE=5V, IC=500mA
pF VCB=10V, f=1MHz
μs
VCC=400V, IC=0.5A, IB1=0.1A
IB2=-0.2A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
BTC3097J3
CYStek Product Specification




 BTC3097J3
CYStech Electronics Corp.
Spec. No. : C663J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 3/7
Typical Characteristics
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
12 3 45
Collector-to-Emitter Voltage---VCE(V)
6
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
1 2 34 5
Collector-to-Emitter Voltage---VCE(V)
6
Emitter Grounded Output Characteristics
0.35
0.3 20mA
0.25
0.2 10mA
8mA
0.15 6mA
4mA
0.1
IB=2mA
0.05
0
0 12 34 5
Collector-to-Emitter Voltage---VCE(V)
6
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
50mA
20mA
15mA
10mA
IB=5mA
1 2 34 5
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
100
VCE=5V
VCE=2V
10
VCE=1V
10000
Saturation Voltage vs Collector Current
VCESAT@IC=5IB
1000
100
1 10
1
10
100
1000
10000
1 10 100 1000 10000
Collector Current---IC(mA)
Collector Current---IC(mA)
BTC3097J3
CYStek Product Specification



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