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Planar Transistor. BTC3097T3 Datasheet

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Planar Transistor. BTC3097T3 Datasheet






BTC3097T3 Transistor. Datasheet pdf. Equivalent




BTC3097T3 Transistor. Datasheet pdf. Equivalent





Part

BTC3097T3

Description

High Voltage NPN Triple Diffused Planar Transistor



Feature


CYStech Electronics Corp. High Voltage N PN Triple Diffused Planar Transistor BT C3097T3 Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page No. : 1/6 Features • High voltage, BVCBO=1 600V min., BVCEO=800V min. • Pb-free lead plating package Symbol BTC3097T3 Outline TO-126 B:Base C:Collector E:Emitter BCE Absolute Maximum Rat ings (Ta=25°C) Parameter Col.
Manufacture

CYStech

Datasheet
Download BTC3097T3 Datasheet


CYStech BTC3097T3

BTC3097T3; lector-Base Voltage Collector-Emitter Vo ltage Emitter-Base Voltage Collector Cu rrent Power Dissipation Operating Junct ion and Storage Temperature Range Note : *1. Single Pulse Pw≦300μs,Duty≦2 %. Symbol VCBO VCEO VEBO IC(DC) IC(Pul se) Pd(Ta=25℃) Pd(Tc=25℃) Tj ; Tstg Limit 1600 800 6 1 3 *1 1 10 -55~+150 Unit V V V A A W °C BTC3097T3 CYSt ek Product Specification CY.


CYStech BTC3097T3

Stech Electronics Corp. Spec. No. : C66 33 Issued Date : 2012.01.19 Revised Dat e : Page No. : 2/6 Characteristics (Ta =25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 Cob tr tstg tf Min. 160 .


CYStech BTC3097T3

.

Part

BTC3097T3

Description

High Voltage NPN Triple Diffused Planar Transistor



Feature


CYStech Electronics Corp. High Voltage N PN Triple Diffused Planar Transistor BT C3097T3 Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page No. : 1/6 Features • High voltage, BVCBO=1 600V min., BVCEO=800V min. • Pb-free lead plating package Symbol BTC3097T3 Outline TO-126 B:Base C:Collector E:Emitter BCE Absolute Maximum Rat ings (Ta=25°C) Parameter Col.
Manufacture

CYStech

Datasheet
Download BTC3097T3 Datasheet




 BTC3097T3
CYStech Electronics Corp.
High Voltage NPN Triple Diffused Planar Transistor
BTC3097T3
Spec. No. : C6633
Issued Date : 2012.01.19
Revised Date :
Page No. : 1/6
Features
High voltage, BVCBO=1600V min., BVCEO=800V min.
Pb-free lead plating package
Symbol
BTC3097T3
Outline
TO-126
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw300μs,Duty2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(Ta=25)
Pd(Tc=25)
Tj ; Tstg
Limit
1600
800
6
1
3 *1
1
10
-55~+150
Unit
V
V
V
A
A
W
°C
BTC3097T3
CYStek Product Specification




 BTC3097T3
CYStech Electronics Corp.
Spec. No. : C6633
Issued Date : 2012.01.19
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
Cob
tr
tstg
tf
Min.
1600
800
6
-
-
-
-
-
-
20
24
5
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
Max.
-
-
-
10
10
100
0.2
0.35
1.2
-
35
-
-
0.8
3
0.4
Unit Test Conditions
V IC=100μA, IE=0
V IC=1mA, IB=0
V IE=100μA, IC=0
μA VCB=1600V, IE=0
μA VCB=800V, IB=0
nA VEB=6V, IC=0
V IC=200mA, IB=40mA
V IC=500mA, IB=100mA
V IC=500mA, IB=100mA
- VCE=5V, IC=10mA
- VCE=5V, IC=100mA
- VCE=5V, IC=500mA
pF VCB=10V, f=1MHz
μs
VCC=400V, IC=0.5A, IB1=0.1A
IB2=-0.2A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
BTC3097T3
Package
TO-126
(Pb-free lead plating package)
Shipping
200 pcs / bag, 10 bags/box, 10 boxes/carton
BTC3097T3
CYStek Product Specification




 BTC3097T3
CYStech Electronics Corp.
Spec. No. : C6633
Issued Date : 2012.01.19
Revised Date :
Page No. : 3/6
Typical Characteristics
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
12 3 45
Collector-to-Emitter Voltage---VCE(V)
6
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
1 2 34 5
Collector-to-Emitter Voltage---VCE(V)
6
Emitter Grounded Output Characteristics
0.35
0.3 20mA
0.25
0.2 10mA
8mA
0.15 6mA
4mA
0.1
IB=2mA
0.05
0
0 12 34 5
Collector-to-Emitter Voltage---VCE(V)
6
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
50mA
20mA
15mA
10mA
IB=5mA
1 2 34 5
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
100
VCE=5V
VCE=2V
10
VCE=1V
10000
Saturation Voltage vs Collector Current
VCESAT@IC=5IB
1000
100
1 10
1
10
100
1000
10000
1 10 100 1000 10000
Collector Current---IC(mA)
Collector Current---IC(mA)
BTC3097T3
CYStek Product Specification



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