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MOSFET. IPW60R170CFD7 Datasheet

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MOSFET. IPW60R170CFD7 Datasheet






IPW60R170CFD7 MOSFET. Datasheet pdf. Equivalent




IPW60R170CFD7 MOSFET. Datasheet pdf. Equivalent





Part

IPW60R170CFD7

Description

MOSFET



Feature


IPW60R170CFD7 MOSFET 600VCoolMOSªCFD 7PowerTransistor CoolMOS™isarevo lutionarytechnologyforhighvoltagep ower MOSFETs,designedaccordingtothe superjunction(SJ)principleand pione eredbyInfineonTechnologies.Thelate stCoolMOS™CFD7isthe successorto theCoolMOS™CFD2seriesandisanop timizedplatform tailoredtotargetsof tswitchingapplications.
Manufacture

Infineon

Datasheet
Download IPW60R170CFD7 Datasheet


Infineon IPW60R170CFD7

IPW60R170CFD7; suchasphase-shiftfull-bridge (ZVS)an dLLC.Resultingfromreducedgatechar ge(Qg),best-in-class reverserecovery charge(Qrr)andimprovedturnoffbeh aviorCoolMOS™ CFD7offershighestef ficiencyinresonanttopologies.Aspar tofInfineon’s fastbodydiodeportf olio,thisnewproductseriesblendsal ladvantagesof afastswitchingtechno logytogetherwithsup.


Infineon IPW60R170CFD7

eriorhardcommutation robustness,witho utsacrificingeasyimplementationint hedesign-in process.TheCoolMOS™CF D7technologymeetshighestefficiency and reliabilitystandardsandfurthermo resupportshighpowerdensity solution s.Altogether, .


Infineon IPW60R170CFD7

.

Part

IPW60R170CFD7

Description

MOSFET



Feature


IPW60R170CFD7 MOSFET 600VCoolMOSªCFD 7PowerTransistor CoolMOS™isarevo lutionarytechnologyforhighvoltagep ower MOSFETs,designedaccordingtothe superjunction(SJ)principleand pione eredbyInfineonTechnologies.Thelate stCoolMOS™CFD7isthe successorto theCoolMOS™CFD2seriesandisanop timizedplatform tailoredtotargetsof tswitchingapplications.
Manufacture

Infineon

Datasheet
Download IPW60R170CFD7 Datasheet




 IPW60R170CFD7
IPW60R170CFD7
MOSFET
600VCoolMOSªCFD7PowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe
successortotheCoolMOS™CFD2seriesandisanoptimizedplatform
tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge
(ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class
reverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOS™
CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon’s
fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof
afastswitchingtechnologytogetherwithsuperiorhardcommutation
robustness,withoutsacrificingeasyimplementationinthedesign-in
process.TheCoolMOS™CFD7technologymeetshighestefficiencyand
reliabilitystandardsandfurthermoresupportshighpowerdensity
solutions.Altogether,CoolMOS™CFD7makesresonantswitching
topologiesmoreefficient,morereliable,lighterandcooler.
Features
•Ultra-fastbodydiode
•Lowgatecharge
•Best-in-classreverserecoverycharge(Qrr)
•ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness
•LowestFOMRDS(on)*QgandRDS(on)*Eoss
•Best-in-classRDS(on)inSMDandTHDpackages
Benefits
•Excellenthardcommutationruggedness
•Highestreliabilityforresonanttopologies
•Highestefficiencywithoutstandingease-of-use/performancetradeoff
•Enablingincreasedpowerdensitysolutions
Potentialapplications
SuiteableforSoftSwitchingtopologies
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,
Telecom,EVCharging
ProductValidation:Qualifiedforindustrialapplicationsaccordingtothe
relevanttestsofJEDEC47/20/22
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
650
170
V
m
Qg,typ
28
nC
ID,pulse
51
A
Eoss @ 400V
3.2
µJ
Body diode diF/dt
1300
A/µs
Type/OrderingCode
IPW60R170CFD7
Final Data Sheet
Package
PG-TO 247-3
Marking
60R170F7
1
PG-TO247-3
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
RelatedLinks
see Appendix A
Rev.2.1,2017-12-12




 IPW60R170CFD7
600VCoolMOSªCFD7PowerTransistor
IPW60R170CFD7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2 Rev.2.1,2017-12-12




 IPW60R170CFD7
600VCoolMOSªCFD7PowerTransistor
IPW60R170CFD7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
Storage temperature
Operating junction temperature
Mounting torque
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
ID
ID,pulse
EAS
EAR
IAS
dv/dt
VGS
VGS
Ptot
Tstg
Tj
-
IS
IS,pulse
dv/dt
Maximum diode commutation speed
Insulation withstand voltage
diF/dt
VISO
Min.
-
-
-
-
-
-
-
-20
-30
-
-55
-55
-
-
-
-
-
-
Values
Typ. Max.
- 14
-9
- 51
- 60
- 0.30
- 3.7
- 120
- 20
- 30
- 75
- 150
- 150
- 60
- 14
- 51
- 70
- 1300
- n.a.
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=3.7A; VDD=50V; see table 10
mJ ID=3.7A; VDD=50V; see table 10
A-
V/ns VDS=0...400V
V static;
V AC (f>1 Hz)
W TC=25°C
°C -
°C -
Ncm
A
A
V/ns
M3 and M3.5 screws
TC=25°C
TC=25°C
VDS=0...400V,ISD<=14A,Tj=25°C
see table 8
A/µs
VDS=0...400V,ISD<=14A,Tj=25°C
see table 8
V Vrms,TC=25°C,t=1min
1) Limited by Tj,max.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
3
Rev.2.1,2017-12-12



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