H05N60E Datasheet (data sheet) PDF





H05N60E Datasheet, N-Channel Power Field Effect Transistor

H05N60E   H05N60E  

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HI-SINCERITY MICROELECTRONICS CORP. Spe c. No. : MOS200603 Issued Date : 2006.0 2.01 Revised Date : 2006.02.07 Page No. : 1/5 H05N60 Series N-Channel Power F ield Effect Transistor Description This advanced high voltage MOSFET is design ed to withstand high energy in the aval anche mode and switch efficiently. This new high energy device also offers a d rain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as po wer suplies, converters, power motor co ntrols and bridge circuits. Features Higher Current Rating • Lower RDS(o n) • Lower Capacitances • Lower Tot al Gate Charge • Tighter VSD Spec

H05N60E Datasheet, N-Channel Power Field Effect Transistor

H05N60E   H05N60E  
ifications • Avalanche Energy Specifie d Absolute Maximum Ratings H05N60 Seri es Pin Assignment Tab 3-Lead Plastic TO -220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3 2 1 3-L ead Plastic TO-220FP Package Code: F Pi n 1: Gate Pin 2: Drain Pin 3: Source 3 2 1 D H05N60 Series Symbol: G S S ymbol ID IDM VGS PD Tj, Tst








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