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Spe c. No. : MOS200603 Issued Date : 2006.0 2.01 Revised Date : 2006.02.07 Page No. : 1/5
N-Channel Power F ield Effect Transistor
This advanced high voltage MOSFET is design ed to withstand high energy in the aval anche mode and switch efficiently. This new high energy device also offers a d rain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as po wer suplies, converters, power motor co ntrols and bridge circuits.
â€ ¢ Higher Current Rating â€¢ Lower RDS(o n) â€¢ Lower Capacitances â€¢ Lower Tot al Gate Charge â€¢ Tighter VSD Spec