H07N60F Datasheet (data sheet) PDF





H07N60F Datasheet, PNP EPITAXIAL PLANAR TRANSISTOR

H07N60F   H07N60F  

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HI-SINCERITY MICROELECTRONICS CORP. Spe c. No. :HSP200204 Issued Date : 1998.01 .06 Revised Date : 2002.03.26 Page No. : 1/3 HSA733SP PNP EPITAXIAL PLANAR TR ANSISTOR Description The HSA733 is des igned for use in driver stage of AF amp lifier. Features • High hFE and Exce llent Linearity: 200 Typ. hFE(VCE=6.0,I C=1.0mA) Absolute Maximum Ratings • Maximum Temperatures Storage Temperatur e ..................................... ....................................... ............... -55 ~ +150 °C Junction Temperature........................... ....................................... .................. +150 °C Maximum • Maximum Power Dissipation Total

H07N60F Datasheet, PNP EPITAXIAL PLANAR TRANSISTOR

H07N60F  
Power Dissipation (Ta=25°C) ........... ....................................... ............................. 250 mW Maximum Voltages and Currents (Ta=25 C) VCBO Collector to Base Voltage .... ....................................... ....................................... ...... -60 V VCEO Collector to Emitter Voltage......................








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