CY7C10612GN

CY7C1061GN/CY7C10612GN 16-Mbit (1M words × 16 bit) Static RAM 16-Mbit (1M words × 16 bit) Static RAM Features ■ High speed ❐ tAA = 10 ns/15 ns ■ Low active power ❐ ICC = 90 mA at 100 MHz ■ Low CMOS standby current ❐ ISB2 = 20 mA (typ) ■ Operating voltages of 2.2 V to 3.6 V ■ 1.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages ■ Offered in dual Chip Enable options Functional Description The CY7C1061GN/CY7C10612GN is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data fro...