2N3810DCSM

SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM Matched Dual Transistor. Dual Ceramic Hermetic Package Suitable For High Gain, Low Noise, Differential Amplifier, Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) Each Side Total Device VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -60V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -50mA PD Total Power Dissipation at TA = 25°C 500mW 600mW(1) Derate Above 25°C 2.86mW/°C 3.43mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES (Each Side) Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min. 1Typ. Max. Units 350 °C/W Notes (1) Total device power dissipation limited by package. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished ...