2N3209X

2N3209X MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) HIGH SPEED PNP SWITCHING TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS 4.32 (0.170) 12.7 (0.500) 5.33 (0.210) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. min. FEATURES SILICON PLANAR EPITAXIAL PNP TRANSISTOR SCREENING OPTIONS AVAILABLE SPACE QUALITY LEVEL OPTIONS HIGH SPEED SATURATED SWITCHING APPLICATIONS For high reliability general purpose applications requiring small size and low weight devices. 31 2 TO-18 (TO-206AA) Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°C unless otherwise stated VCBO Collector - Base Voltage VCEO Collector - Emitter Voltage (IB = 0) VEBO Emitter – Base Voltage (IC = 0) IC Continuous Collector Current PD Total Power Dissipation at Tcase ≤ 25°C Tamb ≤ 25°C Tstg, TJ Operating and Storage Temperature Range -20V -20V -4.0V -200mA 1.2W 0.36W -65 to +200°C Semelab Plc...