TSM8588CS

TSM8588CS Taiwan Semiconductor Complementary N & P-Channel Power MOSFET FEATURES ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Building technologies ● DC Fan ● Motor drives KEY PERFORMANCE PARAMETERS PARAMETER TYPE VALUE UNIT Q1 60 VDS Q2 -60 V VGS = 10V Q1 103 RDS(on) (max) VGS = 4.5V VGS = -10V Q2 122 180 mΩ VGS = -4.5V 220 Q1 4.4 Qg Q2 4.6 nC SOP-8 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Q1 Q2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy (Note 2) TC = 25°C TA = 25°C VDS 60 -60 VGS ±20 ±20 5 -4 ID 2.5 -2 IDM 20 -16 IAS 6.8 -7 EAS 6.9 7.4 Total Power Dissipation TC = 25...