2N3583 2N3584 2N3585
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTO...
2N3583 2N3584 2N3585
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon
NPN transistors designed for high speed switching and high voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC ICM IB PD TJ, Tstg JC
2N3583 250 175 6.0 1.0
2N3584 375 250 6.0 2.0 5.0 1.0 35
-65 to +200 5.0
2N3585 500 300 6.0 2.0
UNITS V V V A A A W °C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N3583
2N3584
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICEV
VCE=225V, VEB=1.5V
- 1.0
--
ICEV
VCE=340V, VEB=1.5V
--
- 1.0
ICEV
VCE=450V, VEB=1.5V
--
--
ICEV
VCE=225V, VEB=1.5V, TC=150°C
- 3.0
--
IC...