SILICON P-CHANNEL JFETS
2N5460 2N5461 2N5462
SILICON P-CHANNEL JFETS
w w w. c e n t r a l s e m i . c o m
The CENTRAL SEMICONDUCTOR 2N5460, 2N5...
Description
2N5460 2N5461 2N5462
SILICON P-CHANNEL JFETS
w w w. c e n t r a l s e m i . c o m
The CENTRAL SEMICONDUCTOR 2N5460, 2N5461, and 2N5462 are silicon P-Channel JFETs designed for low level amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Reverse Gate-Source Voltage Continuous Gate Current Power Dissipation Operating and Storage Junction Temperature
SYMBOL VDG VGSR IG PD
TJ, Tstg
40 40 10 310 -65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5460
2N5461
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
IGSS
VGS=20V
- 5.0
- 5.0
IGSS
VGS=20V, TA=100°C
- 1.0
- 1.0
IDSS
VDS=15V, f=1.0kHz
1.0 5.0
2.0 9.0
BVGSS
IG=10μA
40 -
40 -
VGS
VDS=15V, ID=0.1mA
0.5 4.0
--
VGS
VDS=15V, ID=0.2mA
--
0.8 4.5
VGS
VDS=15V, ID=0.4mA
--
--
VGS(OFF)
|yfs| |yos|
VDS=15V, ID=1.0μA VDS=15V, VGS=0, f=1.0kHz VDS=15V, VGS=0, f=1.0kHz
0.75 1.0K
-
6.0 4.0K 75
1.0 1.5K
-
7.5 5.0K 75
Crss
VDS=15V, VGS=0...
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