Document
SCT3160KL
N-channel SiC power MOSFET
Datasheet
VDSS RDS(on) (Typ.)
ID PD
1200V 160mW
17A 103W
lOutline
TO-247N
lInner circuit
(1)(2)(3)
lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant
lApplication ・Solar inverters ・DC/DC converters ・Switch mode power supplies ・Induction heating ・Motor drives
(1) Gate (2) Drain (3) Source
*1 Body Diode
lPackaging specifications Packing
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Tube 30
C11 SCT3160KL
lAbsolute maximum ratings (Ta = 25°C) Parameter
Drain - Source voltage
Continuous drain current Pulsed drain current
Tc = 25°C Tc = 100°C
Gate - Source voltage (DC)
Gate-Source Surge Voltage (tsurge < 300nsec) Recommended Drive Voltage
Junction temperature
Range of storage temperature
Symbol
VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS_surge*3 VGS_op*4 Tj Tstg
Value 1200
17 12 42 -4 .