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200NS10 Dataheets PDF



Part Number 200NS10
Manufacturers Naina Semiconductor
Logo Naina Semiconductor
Description Standard Recovery Diodes
Datasheet 200NS10 Datasheet200NS10 Datasheet (PDF)

Naina Semiconductor Ltd. 200NS(R) Standard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = 150OC 200 A VFM Maximum peak forward voltage drop @ rated IF(AV) 1.4 V IFSM Maximum peak one cycle (non-rep) surge current @ 10 msec 4000 A IFR.

  200NS10   200NS10



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Naina Semiconductor Ltd. 200NS(R) Standard Recovery Diodes (Stud and Flat Base Type) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = 150OC 200 A VFM Maximum peak forward voltage drop @ rated IF(AV) 1.4 V IFSM Maximum peak one cycle (non-rep) surge current @ 10 msec 4000 A IFRM Maximum peak repetitive surge current 11000 A I2t Maximum I2t rating (non-rep) for 5 to 10 msec 92500 A2sec DO-205AA (DO-8) Electrical Ratings (TE = 250C, unless otherwise noted) Type Voltage number Code VRRM, Maximum repetitive peak reverse voltage (V) VR(RMS), Maximum RMS reverse voltage (V) 200NS(R) 10 20 40 60 80 100 120 140 160 100 200 400 600 800 1000 1200 1400 1600 70 140 280 420 560 700 840 980 1120 VR, Maximum DC blocking voltage (V) 100 200 400 600 800 1000 120.


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