1N1183

Naina Semiconductor Ltd. 1N1183 thru 1N1186R Standard Recovery Diode, 35A Features  Glass passivated die  Low forward voltage drop  High surge capability  Low leakage current  Normal and Reverse polarity  Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1183(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage VDC 50 Continuous forward current TC ≤ 140oC IF(AV) 35 Surge non-repetitive forward current, half-sine wave TC = 25oC IFSM 595 Maximum peak forward voltage IF = 35 A, TJ = 25oC VF 1.2 Reverse current TJ = 25oC TJ = 140oC IR 10 10 1N1184(R) 100 70 100 35 595 1.2 10 10 1N1185(R) 150 105 150 35 595 1.2 10 10 1N1186(R) 200 140 200 35 595 1.2 10 10 Units V V V A A V µA mA Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Symbol 1N1183(R) 1N1184(R) 1N1185(R) Thermal resista...