1N1190

Naina Semiconductor Ltd. 1N1187 thru 1N1190R Standard Recovery Diode, 35A Features  Glass passivated die  Low forward voltage drop  High surge capability  Low leakage current  Normal and Reverse polarity  Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1187(R) Repetitive peak reverse voltage VRRM 300 RMS reverse voltage VRMS 210 DC blocking voltage VDC 300 Continuous forward current TC ≤ 140oC IF(AV) 35 Surge non-repetitive forward current, half-sine wave TC = 25oC IFSM 595 Maximum peak forward voltage IF = 35 A, TJ = 25oC VF 1.2 Reverse current TJ = 25oC TJ = 140oC IR 10 10 1N1188(R) 400 280 400 35 595 1.2 10 10 1N1189(R) 500 350 500 35 595 1.2 10 10 1N1190(R) 600 420 600 35 595 1.2 10 10 Units V V V A A V µA mA Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Symbol 1N1187(R) 1N1188(R) 1N1189(R) Thermal res...