IPC70N04S5-4R6
OptiMOS™-5 Power-Transistor
Features • OptiMOS™ - power MOSFET for automotive applications • N-channel -...
IPC70N04S5-4R6
OptiMOS™-5 Power-
Transistor
Features OptiMOS™ - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
Product Summary VDS RDS(on),max ID
40 V 4.6 mW 70 A PG-TDSON-8-33
1 1
Type IPC70N04S5-4R6
Package
Marking
PG-TDSON-8-33 5N044R6
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V1)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse4) Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=35A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
70
54
280 32 70 ±20 50 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.0
page 1
2016-12-09
IPC70N04S5-4R6
Parameter
Symbol
Conditi...
