Silicon Fast Recovery Diode
Silicon Fast Recovery Diode
Features • High Surge Capability • Types from 100 V to 600 V VRRM • Not ESD Sensitive
Note: ...
Description
Silicon Fast Recovery Diode
Features High Surge Capability Types from 100 V to 600 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
FR12B02 thru FR12JR02
VRRM = 100 V - 600 V IF = 12 A
AC
DO-4 Package
CA Stud Stud
(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
FR12B(R)02 FR12D(R)02 FR12G(R)02
Repetitive peak reverse voltage
VRRM
100 200 400
RMS reverse voltage DC blocking voltage
VRMS VDC
70 140 280 100 200 400
Continuous forward current
IF
TC ≤ 100 °C
12
12
12
FR12J(R)02 Unit
600 V 420 V 600 V 12 A
Surge non-repetitive forward current, Half Sine Wave
IF,SM TC = 25 °C, tp = 8.3 ms
180
Operating temperature Storage temperature
Tj Tstg
-55 to 150 -55 to 150
180
-55 to 150 -55 to 150
180
-55 to 150 -55 to 150
180
-55 to 150 -55 to 150
A
°C °C
Electrical characteristics, at Tj = 25 °C...
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