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S85M Dataheets PDF



Part Number S85M
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Standard Recovery Diode
Datasheet S85M DatasheetS85M Datasheet (PDF)

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S85K thru S85QR VRRM = 800 V - 1200 V IF = 85 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S85K (R) S85M (R) Repetitive peak reverse voltage RMS reverse volt.

  S85M   S85M



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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S85K thru S85QR VRRM = 800 V - 1200 V IF = 85 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S85K (R) S85M (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.3 ms 800 560 800 85 1800 -55 to 150 -55 to 150 1000 700 1000 85 1800 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions S85K (R) Diode forward voltage Reverse current Thermal characteristics Thermal re.



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S85K << | S85M | >> S85Q


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