Silicon Standard Recovery Diode
Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive
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Description
Silicon Standard Recovery Diode
Features High Surge Capability Types from 600 V to 1200 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
S150J thru S150QR
VRRM = 600 V - 1200 V IF =150 A
AC
DO-8 Package
CA Stud Stud
(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
S150J (R) S150K (R) S150M (R) S150Q (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 180 °C TC = 25 °C, tp = 8.3 ms
600 420 600 150
3140
-55 to 150 -55 to 150
800 560 800 150
3140
-55 to 150 -55 to 150
1000 700 1000 150
1200 840 1200 150
3140
3140
-55 to 150 -55 to 150 -55 to 150 -55 to 150
Unit
V V V A
A
°C °C
Electrical characteristics, at Tj = 25 °C,...
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