MBR60030CT Datasheet (data sheet) PDF





MBR60030CT Datasheet, Silicon Power Schottky Diode

MBR60030CT   MBR60030CT  

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Silicon Power Schottky Diode Features High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR60020CT thru MBR60040CTR VRRM = 20 V - 40 V IF(AV) = 600 A Twin Tower Pac kage Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbo l Conditions MBR60020CT(R) MBR60030CT (R) MBR60035CT(R) MBR60040CT(R) Uni

MBR60030CT Datasheet, Silicon Power Schottky Diode

MBR60030CT  
t Repetitive peak reverse voltage RMS r everse voltage DC blocking voltage Oper ating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, a t Tj = 25 °C, unless otherwise specifi ed Parameter Symbol Conditio








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