MBRT60060R

Silicon Power Schottky Diode Features High Surge Capability Types from 45 V to 100 V VRRM Isolation Type Package Electrically Isolated Base Plate Not ESD Sensitive MBRT60045 thru MBRT600100R VRRM = 45 V - 100 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT60045(R) MBRT60060(R) MBRT60080(R) MBRT600100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 56 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRT60045(R) MBRT60060(R) MBRT60080(R) MBRT600100(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward v...